Silicon carbide wafer corrosion system
A technology of silicon carbide crystal and silicon carbide, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high cost of use, adverse effects on the environment and the health of staff, and achieve strong practicability and protect the safety of personnel , the effect of avoiding contact
Active Publication Date: 2022-04-01
ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
View PDF12 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0022] see figure 1 , this embodiment provides a technical solution: a silicon carbide wafer etching system, including a working table, a transmission mechanism, a sealed cabin and an exhaust device;
[0023] The working table includes a plurality of working chambers, which are respectively used to automatically perform different functional treatments in the silicon carbide wafer corrosion process according to the set program; the sealing cabin is used to seal...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to the technical field of silicon carbide wafer processing, and discloses a silicon carbide wafer corrosion system which comprises a working table, a conveying mechanism, a sealed cabin and an exhaust device, the working table top comprises a plurality of working cavities, and the sealing cabin is used for sealing the working cavities to prevent harmful gas from leaking; the conveying mechanism is used for automatically and sequentially conveying the silicon carbide wafers from the sealed cabin to different working cavities for functional treatment according to a set program; and the exhaust device is used for performing harmless treatment on harmful gas emitted from the working cavity. According to the invention, the corrosion process of the silicon carbide wafer is integrated on one working table, and automation of the silicon carbide wafer in the functional treatment process is realized through an automatic mechanism; the whole working table is kept in a negative pressure state through the sealed cabin and the exhaust device, volatilization of harmful gas is prevented, workers only need to take and place samples and check the corrosion progress through the observation window, contact between high temperature and the harmful gas is avoided, and the safety of the workers is protected to the maximum extent.
Description
technical field [0001] The invention relates to the technical field of silicon carbide wafer processing, in particular to a silicon carbide wafer etching system. Background technique [0002] Silicon carbide is a representative material of the third generation of semiconductors. It has a large band gap and high chemical inertness. It has important application value in the field of high-frequency and high-voltage devices. It has been gradually used in photovoltaics, new energy vehicles, smart grids and other fields with excellent performance. However, defects in silicon carbide materials have a direct impact on device performance. Therefore, defects need to be observed and counted in multiple steps such as substrate, processing, epitaxy, and device failure analysis. As a type of two-dimensional defect, dislocation defects cannot be observed by ordinary optical microscopes. [0003] Since dislocations are lattice distortions in crystals, there will be stress concentrations at...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/36
Inventor 王蓉李佳君皮孝东沈典宇王芸霞杨德仁
Owner ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT