Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof, and the manufacturing method comprises the steps: providing a substrate which comprises a high-voltage region and a low-voltage region; forming a side wall material layer; forming a patterned photoresist layer, and removing a partial thickness of the side wall material layer on the side surface of the second gate layer in the low-voltage region by taking the patterned photoresist layer as a mask; and etching the side wall material layer to form a side wall. A patterned photoresist layer is used as a mask to protect a side wall material layer on the side surface of a first gate layer in a high-voltage region and remove a partial thickness of the side wall material layer on the side surface of a second gate layer in a low-voltage region; therefore, when the side wall material layer is etched to form the side wall, the thickness of the side wall in the high-voltage area is larger than that of the side wall in the low-voltage area, and meanwhile, the requirements that the high-voltage element needs the side wall with the large thickness and the low-voltage element needs the side wall with the small thickness during device integration are met; and the integration feasibility of a high-voltage element and a deep submicron device is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing, and in particular relates to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the non-standard logic process of integrated circuits, high-voltage (HV, High voltage) components are often integrated with deep submicron (28-90nm) CMOS devices (such as including low-voltage (LV, Low voltage) components), that is, integrated manufacturing in the same semiconductor device. The different performance requirements of high-voltage components and low-voltage components lead to large differences in device structure requirements. With standard logic processes, the performance of high-voltage components is often limited. Due to high voltage requirements, high-voltage components require larger thickness of sidewalls; low-voltage components require device speed and require smaller thickness of sidewalls, making the integration and manufacture ...

AI Technical Summary

Problems solved by technology

The different performance requirements of high-voltage components and low-voltage components lead to large differences in device structure requirements

Using standard logic processes often limits the performance of high-voltage components

Due to high voltage requirements, high-voltage components require larger thickness of sidewalls; low-voltage components require device speed and require smaller thickness of sidewalls, making the integration and manufacture of semiconductor devices more difficult

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