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Boron-containing organic compound serving as doping material and organic light-emitting device containing boron-containing organic compound

A technology of organic compounds and doped materials, which is applied in the field of semiconductors, can solve problems such as the narrowing of the luminous peak shape, and achieve the effects of large processing window temperature, low molecular weight, and improved device life

Pending Publication Date: 2022-04-05
JIANGSU SUNERA TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fluorescent doped materials can achieve high fluorescence quantum and narrow half-peak width through molecular engineering. Blue fluorescent doped materials have achieved a breakthrough in stages. In the green light region, the research mainly focuses on phosphorescent doped materials, but its luminous peak shape is difficult to narrow by simple methods. Therefore, in order to meet higher color rendering standards, it is of great significance to study efficient green fluorescent doped materials with narrow half-peak widths.

Method used

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  • Boron-containing organic compound serving as doping material and organic light-emitting device containing boron-containing organic compound
  • Boron-containing organic compound serving as doping material and organic light-emitting device containing boron-containing organic compound
  • Boron-containing organic compound serving as doping material and organic light-emitting device containing boron-containing organic compound

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] Embodiment 1: the synthesis of compound 1

[0063]

[0064] (1) In the three-necked flask, under the protection of nitrogen, add 0.01mol raw material A1, 0.012mol raw material B1, 150ml toluene and stir to mix, then add 5×10 -5 mol Pd 2 (dba) 3 , 5×10 -5 mol P(t-Bu) 3 , heated to 110° C., and refluxed for 24 hours. The reaction was observed by TLC until the reaction was complete. Naturally cooled to room temperature, filtered, and the filtrate was rotary evaporated until there was no fraction, and passed through a neutral silica gel column to obtain intermediate A1.

[0065]

[0066] (2) In the three-necked flask, under the protection of nitrogen, add 0.01mol intermediate A1, 0.013mol raw material C3, 150ml toluene and stir to mix, then add 5×10 -5 mol Pd 2 (dba) 3 , 5×10 -5 mol P(t-Bu) 3 , heated to 110° C., and refluxed for 24 hours. The reaction was observed by TLC until the reaction was complete. Naturally cooled to room temperature, filtered, and th...

Embodiment 2

[0069] Embodiment 2: the synthesis of compound 12

[0070]

[0071] Compound 12 was prepared according to the synthetic method of compound 1 in Example 1, except that raw material A1 was replaced by raw material A2, and raw material C1 was replaced by raw material C2.

Embodiment 3

[0072] Embodiment 3: the synthesis of compound 101

[0073]

[0074] (1) In the three-necked flask, under the protection of nitrogen, add 0.01mol raw material D1, 0.013mol raw material E1, 150ml toluene and stir to mix, then add 5×10 -5 mol Pd 2 (dba) 3 , 5×10 -5 mol P(t-Bu) 3 , heated to 110° C., and refluxed for 24 hours. The reaction was observed by TLC until the reaction was complete. Naturally cooled to room temperature, filtered, and the filtrate was rotary evaporated until there was no fraction, and passed through a neutral silica gel column to obtain intermediate B3.

[0075] (2) In the three-necked flask, under the protection of nitrogen, add 10mmol of intermediate B3, add 12mmol of tert-butyllithium, 12mmol of EtN(i-Pr) 2 , 150ml of toluene was stirred and mixed, kept at 60°C for 2 hours, cooled to room temperature, and dissolved 12mmolBBr was added dropwise 3 10ml of toluene solution, fully reacted for half an hour, and observed the reaction by TLC until th...

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Abstract

The invention relates to a boron-containing organic compound serving as a doping material and an organic light-emitting device containing the boron-containing organic compound, and belongs to the technical field of semiconductors, the structure of the compound is shown in the general formula (1), and the compound has narrow half-peak width, high fluorescence quantum yield, high glass-transition temperature and molecular thermal stability, and can be used for preparing the organic light-emitting device. Compared with the prior art, the organic light-emitting material has the advantages that the organic light-emitting material has proper HOMO and LUMO energy levels, and when the organic light-emitting material is used as a doping material in a light-emitting layer material of an OLED light-emitting device, the current efficiency and the external quantum efficiency of the device are remarkably improved, the light-emitting color purity is greatly improved, and the service life of the device is greatly prolonged; the boron-containing organic compound provided by the invention is used as a luminescent layer doping material, so that the device has good photoelectric properties.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a boron-containing organic compound as a doping material and an organic light-emitting device comprising the same. Background technique [0002] Traditional fluorescent doping materials are limited by early technology, and can only use 25% singlet excitons formed by electrical excitation to emit light. The internal quantum efficiency of the device is low (up to 25%), and the external quantum efficiency is generally lower than 5%. There is still a big gap with the efficiency of phosphorescent devices. Due to the strong spin-orbit coupling of the heavy atom center, the phosphorescent material enhances the intersystem crossing, and can effectively use the singlet excitons and triplet excitons formed by electrical excitation to emit light, so that the internal quantum efficiency of the device can reach 100%. However, most phosphorescent materials are expensive, have poor mate...

Claims

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Application Information

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IPC IPC(8): C07F5/02C09K11/06H01L51/54
Inventor 吴逸曹旭东李崇张兆超
Owner JIANGSU SUNERA TECH CO LTD