Crystal defect detection method and crystal bar growth method

Abstract

The invention provides a crystal defect detection method and a crystal bar growth method.The crystal defect detection method comprises the steps that a silicon wafer with crystal defects is sequentially subjected to heat treatment and gas phase etching, so that the crystal defects appear; the surface of the silicon wafer is observed, and if a pit is formed in the surface of the silicon wafer, the crystal defect in the silicon wafer is a dislocation ring defect; and if pits and precipitates in the pits are formed on the surface of the silicon wafer, determining that the crystal defects in the silicon wafer are self-interstitial atom aggregate defects. According to the technical scheme, the dislocation ring defect zone and the self-interstitial atom aggregate defect zone can be accurately distinguished.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for detecting crystal defects and a crystal rod growth method. Background technique [0002] During the crystal growth process, affected by the process conditions of crystal growth, different types of original micro-defects will be formed, such as voids (Crystal Originated Particle, COP), oxygen precipitation, dislocation loop (A-defect) and self-interstitial atom agglomeration Body (B-defect). [0003] In order to obtain high-quality wafers, various micro-defects in single crystal silicon need to be characterized in detail, and the characterization results are used to monitor the crystal growth process, adjust the parameters of crystal growth, and finally obtain defect-free crystals. Among them, a variety of optical and chemical methods have been used for the characterization of COP, oxygen precipitation, and A-defect, such as light scatter...

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Problems solved by technology

[0005] However, B-defect defect bands and A-defect defect bands often cross. Sub-defects have similar etching morphology of copper modification. Without the assistance of other methods, the method of heat treatment plus copper modification will not be able to help distinguish the detected defects from further growing during heat treatment and reaching the smaller detection limit of copper modification. The size of the A-defect is still a secondary defect related to the B-defect generated during the heat treatment process, and it is impossible to accurately distinguish the B-defect defect zone

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