Batch evaluation method for BMD in monocrystalline silicon
An evaluation method and monocrystalline silicon technology, which is applied in semiconductor/solid-state device testing/measurement, measuring devices, and material analysis through optical means, can solve problems such as cumbersome work, low density, and heavy BMD counting workload, and achieve The effect of simple working procedure, less interference and less workload
Pending Publication Date: 2022-04-05
宁夏中欣晶圆半导体科技有限公司
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Problems solved by technology
Semiconductor-grade monocrystalline silicon is even stricter on the number of defects. High density will have a significant impact on product performance, but low density will also not satisfy the beneficial effects of built-in gettering.
[0003] The existing evaluation method for primary defects in single crystal silicon is to split the heat-treated single crystal silicon wafer and observe the cross-section under a microscope to count micro-defects in vivo and calculate the density. When a batch of silicon wafers needs to be processed, each Each silicon wafer is split, and then the section of the silicon wafer is counted under a microscope, which makes the counting workload of BMD heavy and cumbersome.
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Embodiment 1
[0046] Example 1: Cut monocrystalline silicon into silicon wafers with a thickness of 1 mm, rapidly raise the temperature of the silicon wafers to 1100 °C at 80 °C / s, pass in 50 bar of nitrogen, and react for 20 minutes. After 20 minutes of reaction, pass in 60 bar of argon Keep the temperature for 10 minutes, then cool down to 800°C at a rate of 20°C / min, react for 4 hours, and then raise the temperature to 1000°C at a rate of 7°C / min to obtain processed silicon wafers, and then mechanically process the processed silicon wafers Polishing, removing the thickness of 30 μm on the front and back sides of the silicon wafer to be processed, then splitting the silicon wafer in half, and detecting it under a microscope. The distribution of BMD at different depths inside the silicon wafer in specific embodiments is as follows figure 1 , 2 shown.
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Abstract
The invention discloses a batch evaluation method for BMD in monocrystalline silicon. The method comprises the following steps: selecting a plurality of original silicon wafers with different oxygen contents; fTIR detection is carried out on the plurality of original silicon wafers, and the initial value of oxygen in the center gap of each original silicon wafer is obtained; processing each original silicon wafer by adopting the same heat treatment process to obtain a processed silicon wafer; fTIR (Fourier transform infrared spectroscopy) detection is carried out on the plurality of processed silicon wafers respectively, and the residual value of oxygen in the central gap of each processed silicon wafer is obtained; respectively carrying out BMD detection on the plurality of processed silicon wafers to obtain a BMD value of each processed silicon wafer; and performing linear fitting on the obtained data of the initial value of the central gap oxygen, the residual value of the central gap oxygen and the BMD numerical value to obtain a correlation formula of the number of the BMDs and the change value of the central gap oxygen, detecting the variable quantity of the gap oxygen of the silicon wafer to be tested through FTIR (Fourier Transform Infrared Spectroscopy), and putting the variable quantity of the gap oxygen into the correlation formula to obtain the number of the BMDs.
Description
technical field [0001] The invention relates to the technical field of a detection method for BMD in a single crystal silicon body, in particular to a batch evaluation method for BMD in a single crystal silicon body. Background technique [0002] CZ method Czochralski monocrystalline silicon will have defects during the crystal growth process, and some defects will have a more obvious negative impact on the product. Therefore, single crystal silicon products will detect defects to control product quality or improve the reaction process. Semiconductor-grade monocrystalline silicon is more strict on the number of defects. High density will have a significant impact on the performance of the product, but low density will also not satisfy the beneficial effects such as built-in gettering. [0003] The existing evaluation method for primary defects in single crystal silicon is to split the heat-treated single crystal silicon wafer and observe the cross-section under a microscope...
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IPC IPC(8): G01N21/956G01N21/01H01L21/66
Inventor 倪浩然谢国荣冉泽平祁海滨王忠保
Owner 宁夏中欣晶圆半导体科技有限公司