Vertical incidence ultra wide band integrated photoelectric detector chip and manufacturing method thereof
An integrated light, vertical incidence technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of poor performance such as saturated optical power, low fiber coupling efficiency, and great influence by polarization, and improve the detector bandwidth. , Large saturated optical power, the effect of avoiding polarization loss
Pending Publication Date: 2022-04-05
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology
[0008] In view of this, the purpose of the present invention is to address the deficiencies in the practical application of existing high-speed photodetectors, and to solve the problem of complicated and difficult manufacturing process of waveguide-type side light-introduced high-speed photodiode chips, low fiber coupling efficiency, and high polarization influence. Large problems, problems of poor performance such as bandwidth, responsivity, and saturated optical power of vertically incident high-speed photodiode chips, provide a vertically incident ultra-broadband integrated photodetector chip and its manufacturing method
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[0050] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the diagrams provided in the following embodiments are only schematically illustrating the basic concept of the present invention, and the following embodiments and the features in the embodiments can be combined with each other in the case of no conflict.
[0051] Such as figure 1 As shown, a preferred embodiment of the vertical incidence ultra-broadband integrated photodetector chip manufacturing method of the ...
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The invention relates to a vertical incidence ultra-wideband integrated photoelectric detector chip and a manufacturing method thereof. The manufacturing method comprises the following steps: manufacturing a capacitor lower electrode and a bias network transmission line on a carrier; manufacturing a capacitor dielectric layer; forming a matching resistor, an impedance matching network transmission line and a capacitor upper electrode on the capacitor dielectric layer; forming a metal bump; manufacturing a micro lens on the substrate on the back surface of the diode chip; and the diode chip is welded on the carrier in a flip-chip bonding manner. According to the invention, through monolithic integration of the bias network and the impedance matching network, control of parasitic parameters is realized, and the bandwidth of the detector is improved; a micro lens is integrated on the back surface, so that the coupling redundancy and responsivity are improved, and the influence of polarization loss is avoided; each index can reach or exceed the performance index level of a current mainstream waveguide type detector, and the method has positive significance on design and manufacturing of an ultra-wideband photoelectric detector.
Description
technical field [0001] The invention belongs to the technical field of semiconductor photodiodes, and relates to a vertically incident ultra-broadband integrated photodetector chip and a manufacturing method thereof. Background technique [0002] In optical fiber communication systems, photodetector chips are used to convert information-carrying optical signals into information-carrying electrical signals, so that subsequent circuits can process the information. According to the different ways of incident light, it can be divided into vertical incidence type and side illumination type. [0003] As high-speed optical fiber communication systems, ultra-fast pulse measurement, millimeter wave systems and THz technology continue to increase the speed requirements of photodetector chips (≥50GHz), in order to solve the problem of mutual constraints between speed and efficiency, the current high-speed The detectors all adopt the method of side incidence and evanescent wave couplin...
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Login to View More IPC IPC(8): H01L31/18H01L31/0232H01L31/102
CPCY02P70/50
Inventor 王立崔大健严雪峰黄晓峰唐艳
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP