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Ferroelectric memristor based on lanthanum titanate and preparation method thereof

A technology of memristive devices and lanthanum titanate, which is applied in the field of ferroelectric memristive devices based on lanthanum titanate and its preparation, can solve urgent research problems and achieve the effect of simple preparation method, low cost, and widening application scenarios

Pending Publication Date: 2022-04-05
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, as a new hardware implementation method for brain-like neural computing, ferroelectric memristors still need to be studied urgently to simulate the nature of biological synapse functions.

Method used

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  • Ferroelectric memristor based on lanthanum titanate and preparation method thereof
  • Ferroelectric memristor based on lanthanum titanate and preparation method thereof
  • Ferroelectric memristor based on lanthanum titanate and preparation method thereof

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Embodiment 1

[0039] Such as figure 1 As shown, a ferroelectric memristive device based on lanthanum titanate, the ferroelectric memristive device is arranged on the substrate, and the ferroelectric memristive device includes a bottom electrode, a resistive layer and a The top electrode, the material of the bottom electrode and the top electrode is TiN, and the material of the resistive layer is La 2 Ti 2 o 7 ; The bottom surface of the resistive switch layer is in contact with the top surface of the bottom electrode, the top surface of the resistive switch layer is in contact with the bottom surface of the top electrode, and the ferroelectric memristive device is integrated with an NJUPT in one area A single device with lettering, a rectangular single device with 2 regions, a circular single device with 3 regions, 9 3×3 memristor arrays, 3 8×8 memristor arrays, and 1 12×12 memristor array.

[0040] In some embodiments, the bottom electrode, the resistive switch layer and the top electr...

Embodiment 2

[0047] A method for preparing a ferroelectric memristive device based on lanthanum titanate, the method includes two parts:

[0048] 1. Design a new type of mask, and the device types include: a single device with NJUPT in 1 area, a rectangular single device in 2 areas, a circular single device in 3 areas, 9 3×3 memristor arrays, 3 8×8 memristor array, 1 12×12 memristor array.

[0049]2. Prepare a ferroelectric memristive device based on lanthanum titanate, comprising the following steps:

[0050] S1: Clean the silicon wafer with deionized water and then dry it with a dryer, and cover the dried silicon wafer with the first mask (such as figure 2 shown), through PVD physical vapor deposition, a layer of TiN with a thickness of 100 nm was deposited under vacuum as the bottom electrode;

[0051] S2: Remove the first mask and cover the second mask with alignment marks (such as image 3 shown), a layer of La with a thickness of 20nm was oxidized and grown under vacuum 2 Ti 2 ...

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Abstract

The invention provides a lanthanum titanate-based ferroelectric memristive device and a preparation method thereof, the ferroelectric memristive device is arranged on a substrate, the ferroelectric memristive device comprises a bottom electrode, a resistance change layer and a top electrode which are sequentially arranged from bottom to top, the bottom electrode and the top electrode are made of TiN, and the resistance change layer is made of La2Ti2O7; the bottom surface of the resistive layer is in contact with the top surface of the bottom electrode, and the top surface of the resistive layer is in contact with the bottom surface of the top electrode; the ferroelectric memristor is integrated with a single device in the shape of NJUPT in one area, a rectangular single device in two areas, a circular single device in three areas, nine 3 * 3 memristor arrays, three 8 * 8 memristor arrays and a 12 * 12 memristor array.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric storage, and relates to a ferroelectric memristive device based on lanthanum titanate and a preparation method thereof. Background technique [0002] A memristor is a passive circuit element associated with magnetic flux and charge. As early as 1971, Professor Cai Shaotang theoretically predicted the existence of memristors. Until 2008, Hewlett-Packard Laboratory prepared memristor devices for the first time, which confirmed Professor Cai Shaotang's theory about memristors. Memristors have nonlinear electrical properties, and have the advantages of simple structure, easy integration, high speed, low power consumption, and compatibility with CMOS circuits. [0003] Today, memristors have been developed with nanosecond switching speeds, low energy consumption, and long write / erase endurance. Since the human brain consumes much less energy (approximately 20W) than a state-of-the-art computer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
Inventor 陈星宇张缪城秦琦戎焕焕童祎
Owner NANJING UNIV OF POSTS & TELECOMM
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