The invention belongs to the technical field of semiconductors, and relates to a photoelectric
synapse device based on an LLTO
ion gate, which comprises a substrate, a bottom
electrode, a gate medium, a channel, a source
electrode and a drain
electrode, the gate medium is made of
lithium lanthanum titanate, and the channel is made of a two-dimensional
semiconductor film. The photoelectric
synapse device has the characteristic that volatile
synapse and non-volatile synapse are adjustable, has a large storage window, a high switch ratio, anticlockwise transfer curve
hysteresis, quick response and excellent stability, has synapse response to
electricity and
optics, can perform low-power-consumption operation, and has a wide application prospect. The method is one of ideal candidate device systems for advanced electronic devices and neuromorphic calculation in the future.