Unlock instant, AI-driven research and patent intelligence for your innovation.

Graphene-based lithium niobate film broadband mode filter

A graphene and filter technology, applied in the direction of optical waveguide and light guide, can solve the problems of optical waveguide mode crosstalk, etc., and achieve the effect of broadband filter mode extinction ratio, compact structure, and high mode extinction ratio

Inactive Publication Date: 2022-04-12
ZHEJIANG LAB
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a graphene-based lithium niobate thin film broadband mode filter, which solves the mode crosstalk problem of optical waveguides in existing wavelength division multiplexing devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene-based lithium niobate film broadband mode filter
  • Graphene-based lithium niobate film broadband mode filter
  • Graphene-based lithium niobate film broadband mode filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A graphene-based lithium niobate thin film broadband mode filter, including silicon substrate layer, silicon dioxide layer, lithium niobate thin film, graphene and polymethyl methacrylate waveguide arranged in sequence from bottom to top; Graphene is arranged at the center of the polymethyl methacrylate waveguide as a fundamental mode filter.

[0033] In the fundamental mode filter, the thickness of the silicon substrate layer is 0.5nm, the thickness of the silicon dioxide layer is 2μm, the thickness of the lithium niobate film is 300nm, the tangential direction of the lithium niobate film crystal is X-cut, the thickness of the graphene is 0.34nm, and the width of the graphene is 300nm, the thickness of the PMMA waveguide is 500nm, and the width is 2μm.

[0034] Take 1550nm optical transmission as an example: the light source is a tunable fiber laser with a wavelength of 1550nm. The output fiber of the laser passes through a polarization controller and is connected to t...

Embodiment 2

[0036] A graphene-based lithium niobate thin film broadband mode filter, including silicon substrate layer, silicon dioxide layer, lithium niobate thin film, graphene and polymethyl methacrylate waveguide arranged in sequence from bottom to top; Graphene is arranged at the center of the polymethyl methacrylate waveguide as a fundamental mode filter.

[0037] In the fundamental mode filter, the thickness of the silicon substrate layer is 0.5nm, the thickness of the silicon dioxide layer is 2μm, the thickness of the lithium niobate film is 300nm, the tangential direction of the lithium niobate film crystal is X-cut, the thickness of the graphene is 0.34nm, and the width of the graphene is 500nm, the thickness of the PMMA waveguide is 500nm, and the width is 2.5μm.

[0038] Take 1550nm optical transmission as an example: the light source is a tunable fiber laser with a wavelength of 1550nm. The output fiber of the laser passes through a polarization controller and is connected to...

Embodiment 3

[0040]A graphene-based lithium niobate thin film broadband mode filter, including silicon substrate layer, silicon dioxide layer, lithium niobate thin film, graphene and polymethyl methacrylate waveguide arranged in sequence from bottom to top; Graphene is arranged at the center of the polymethyl methacrylate waveguide as a fundamental mode filter.

[0041] In the fundamental mode filter, the thickness of the silicon substrate layer is 0.5nm, the thickness of the silicon dioxide layer is 2μm, the thickness of the lithium niobate film is 300nm, the tangential direction of the lithium niobate film crystal is X-cut, the thickness of the graphene is 0.34nm, and the width of the graphene is 600nm, the thickness of the PMMA waveguide is 500nm, and the width is 3μm.

[0042] Take 1550nm optical transmission as an example: the light source is a tunable fiber laser with a wavelength of 1550nm. The output fiber of the laser passes through a polarization controller and is connected to th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Widthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The graphene-based lithium niobate film broadband mode filter comprises a silicon substrate layer, a silicon dioxide layer, a lithium niobate film, graphene and a polymethyl methacrylate waveguide which are sequentially arranged from bottom to top, the graphene is arranged at the central position of the polymethyl methacrylate waveguide and is a fundamental mode filter; the graphene is arranged at the edge position of the polymethyl methacrylate waveguide and is a first-order mode filter. The filter has the characteristics of compact structure, broadband filtering and high mode extinction ratio, and meets the actual filtering use requirement in an integrated photonics mode multiplexing device.

Description

technical field [0001] The invention relates to the technical field of a broadband on-chip mode filter, in particular to a graphene-based lithium niobate thin film broadband mode filter. Background technique [0002] The most basic structure of a device in integrated photonics is an optical waveguide. With the growth of information transmission requirements, mode-division multiplexing waveguide devices have been used more and more. For mode multiplexing devices, the optical waveguide structure needs to be able to transmit multiple modes. The mutual crosstalk of the modes in the mode division multiplexing device will affect the performance of the device, and one of the effective means to reduce the mode crosstalk is to introduce mode filtering. By introducing a specific structure, the filtering of a specific mode can be realized, which can reduce the crosstalk of the device and improve the performance of the device. Mode filtering technology is of great significance to the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B6/12
Inventor 钮云飞储涛
Owner ZHEJIANG LAB