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Silicon-based OLED (Organic Light Emitting Diode) micro display

A micro-display and silicon-based technology, applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as limited color gamut, reduced device brightness, brightness attenuation, etc., to achieve spectrum narrowing and increase brightness Effect

Pending Publication Date: 2022-04-12
LAKESIDE PHOTOELECTRONICS TECH JIANGSU CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the light transmittance of CF is low, which will lead to attenuation of brightness and loss of luminous efficiency, and the color gamut is limited by the color gamut of CF.
To increase the color gamut, the thickness of CF must be increased, which leads to a further reduction in light transmittance and reduces the brightness of the device

Method used

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  • Silicon-based OLED (Organic Light Emitting Diode) micro display
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  • Silicon-based OLED (Organic Light Emitting Diode) micro display

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Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] The object of the present invention is to provide a silicon-based OLED microdisplay, which can effectively improve the brightness and color gamut of the OLED microdisplay.

[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0029] figure 1 The schematic d...

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Abstract

The invention relates to a silicon-based OLED (Organic Light Emitting Diode) micro-display which sequentially comprises a silicon-based substrate, a metal anode layer, an organic functional layer, a transparent conductive film layer, a semi-transparent and semi-reflective metal layer, a thin film packaging layer, a color photoresist layer and a glass cover plate from bottom to top, the metal anode layer comprises a red sub-pixel, a green sub-pixel and a blue sub-pixel; the thicknesses of the parts, corresponding to the red sub-pixels, the green sub-pixels and the blue sub-pixels, of the transparent conductive film layer are different; and the metal anode layer, the organic functional layer, the transparent conductive film layer and the semi-transparent and semi-reflective metal layer form an F-P type microcavity. According to the invention, the brightness and the color gamut of the OLED micro-display can be effectively improved.

Description

technical field [0001] The invention relates to the field of microdisplays, in particular to a silicon-based OLED microdisplay. Background technique [0002] At present, the OLED panel industry usually adopts the following two methods to realize full-color display: 1. Use red, green and blue sub-pixels in parallel; 2. Use white OLED plus color filter film (CF). Method 1 has been widely used in the field of small and medium-sized AMOLEDs. Its advantage is that it does not require a color filter film and will not cause loss of brightness, so it can achieve high brightness and low power consumption. [0003] However, in the field of micro-display, the sub-pixel size is usually less than 5 μm. Currently, it is limited by the alignment accuracy of OLED evaporation equipment, and the opening of the fine metal mask (FMM) cannot be made small enough to match the panel. of sub-pixels. Therefore, in the field, a white light OLED plus a color filter film is usually used to realize fu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/32H01L51/52
Inventor 吴远武王绍华王健波吴迪
Owner LAKESIDE PHOTOELECTRONICS TECH JIANGSU CO