Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device, method and system for testing performance parameters of thin-film thermoelectric material

A thermoelectric material and parameter testing technology, applied in the direction of material resistance, material thermal development, etc., can solve the problems of difficulty in meeting the actual needs of fast and simple testing of thin-film thermoelectric materials, low test accuracy, slow test speed, etc., to avoid damage or Uneven heat distribution, simplified test process, and improved test speed

Pending Publication Date: 2022-04-15
INST OF CHEM CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Based on the above analysis, the present invention aims to provide a device, method and system for testing the performance parameters of thin-film thermoelectric materials to solve one of the following technical problems: (1) the traditional thermoelectric performance parameter testing method is complicated to operate; (2) the traditional The test method of thermoelectric performance parameters is slow in test speed and low in test accuracy; (3) The traditional test method of thermoelectric performance parameters is difficult to meet the actual needs of fast and simple testing of a large number of thin film thermoelectric material performance parameters

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device, method and system for testing performance parameters of thin-film thermoelectric material
  • Device, method and system for testing performance parameters of thin-film thermoelectric material
  • Device, method and system for testing performance parameters of thin-film thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0096] An embodiment of the present invention provides a device for testing thermoelectric performance parameters of thin film thermoelectric materials, such as figure 1 As shown, the device for testing thermoelectric performance parameters of thin film thermoelectric materials mainly includes: cavity (101-107), basic temperature control unit 2, buffer layer 3, temperature difference control unit 4, stylus fixing device 5 and testing equipment.

[0097] The basic temperature control unit 2 , the buffer layer 3 , and the sample temperature and temperature difference control unit 4 are relatively arranged inside the test chamber 101 .

[0098] The basic temperature control unit 2 is carried on the bottom of the test chamber 101 and is used to control the basic test temperature of the sample to be tested; after a single test, the basic temperature control unit 2 can be used to quickly return the sample to room temperature.

[0099] The buffer layer 3 is carried on the surface of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a device, a method and a system for testing performance parameters of a thin-film thermoelectric material, which are used for solving the problems that the traditional thermoelectric performance parameter testing method is complicated in operation, low in testing speed and low in testing accuracy, and the rapid and simple testing of the performance parameters of a large number of thin-film thermoelectric materials is difficult to meet. The testing device comprises a basic temperature control unit and a temperature difference control unit which are arranged from bottom to top, the basic temperature control unit is used for controlling the basic temperature of the sample to be tested; the temperature difference control unit is used for controlling the temperature difference between two ends of the to-be-tested sample; the temperature difference control unit comprises a to-be-tested sample bearing part, and the to-be-tested sample bearing part is used for bearing a to-be-tested sample. According to the technical scheme provided by the invention, the thermoelectric performance parameters of the thin-film thermoelectric material can be simply, quickly and accurately tested, and the thermoelectric performance parameters of the thin-film thermoelectric material can be automatically processed.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric testing, and in particular relates to a device, method and system for testing performance parameters of thin-film thermoelectric materials. Background technique [0002] Thermoelectric materials are special functional materials that can directly convert heat and electricity, providing a simple and effective way to utilize waste heat and natural heat. As an energy conversion material, thermoelectric materials have the advantages of compact structure, small size, no moving parts, no noise, no excrement (no pollution), and high reliability. Temperature difference power generation, self-powered sensors, etc. have been widely studied and applied. In the prior art, the devices for testing the performance parameters of thermoelectric materials are mainly designed for inorganic thermoelectric materials, and the samples to be tested are mostly hard blocks or thick sheets, which can be tested direct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/20G01N27/04
Inventor 狄重安金文龙赵文瑞邹业张凤娇孟青代小娟朱道本
Owner INST OF CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products