Ferroelectric field effect transistor memory device structure

Abstract

A ferroelectric field effect transistor memory device structure provided by the present invention comprises a memory device structure body, the memory device structure body comprises a shell, pins, a pressing plate and a moisture-proof plate, the pressing plate is mounted on the surface of the shell, an information label is arranged on the surface of the pressing plate, a protection layer is arranged in the shell, and the moisture-proof plate is arranged in the shell. A substrate is arranged at the bottom end of the protective layer, an insulating column is arranged at the bottom end of the shell, a moisture-proof plate is attached to the bottom end of the insulating column, a plurality of pins are connected to the two sides of the shell, a welding plate is arranged at the tail ends of the pins, a tin column is arranged in the middle of the welding plate, and a copper bar is connected to the side edge of the tin column. The surface of the shell is coated with filling glue, the pressing plate is attached to the top of the shell through the filling glue, the ferroelectric field effect transistor storage device structure has efficient anti-fake and tamper-proof functions, welding is faster and more accurate, pin installation is more uniform and stable, and a certain moisture-proof effect is achieved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a ferroelectric field effect transistor memory device structure. Background technique [0002] Ferroelectric field effect transistor memory has the advantages of high integration, fast read and write speed, low power consumption, and good compatibility with CMOS technology. Compared with ferroelectric random access memory with capacitor structure, its structure is simpler and higher integration ; Therefore, ferroelectric field effect transistor memory is widely considered to be one of the most potential memory in the next generation of memory. [0003] The existing ferroelectric field effect transistor memory needs to etch a label on the surface of the shell during packaging, and the etching method is mostly laser engraving, but some merchants or private individuals will tamper with the etched label on the surface in order to seek greater benefits , in order to counterfeit more a...

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Problems solved by technology

[0003] The existing ferroelectric field effect transistor memory needs to etch a label on the surface of the shell during packaging, and the etching method is mostly laser engraving, but some merchants or private individuals will tamper with the etched label on the surface in order to seek greater benefits , in order to counterfeit more advanced chips for sale, the conventional label etching method lacks anti-counterfeiting, and cannot prevent this type of behavior. On the other hand, when soldering ferroelectric field effect transistor memories, there are many pins. The quality of welding directly affects the service life of the later period. The existing welding method will cause deformation to the welding plate of the pin, and the deformation cannot be controlled, so the welding quality is difficult to unify

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