A ferroelectric
field effect transistor memory device structure provided by the present invention comprises a memory device structure body, the memory device structure body comprises a shell, pins, a pressing plate and a
moisture-proof plate, the pressing plate is mounted on the surface of the shell, an information
label is arranged on the surface of the pressing plate, a
protection layer is arranged in the shell, and the
moisture-proof plate is arranged in the shell. A substrate is arranged at the bottom end of the protective layer, an insulating column is arranged at the bottom end of the shell, a
moisture-proof plate is attached to the bottom end of the insulating column, a plurality of pins are connected to the two sides of the shell, a
welding plate is arranged at the
tail ends of the pins, a
tin column is arranged in the middle of the
welding plate, and a
copper bar is connected to the side edge of the
tin column. The surface of the shell is coated with filling glue, the pressing plate is attached to the top of the shell through the filling glue, the ferroelectric
field effect transistor storage device structure has efficient anti-fake and tamper-proof functions,
welding is faster and more accurate, pin installation is more uniform and stable, and a certain moisture-proof effect is achieved.