Integrated circuit device and method of forming same
A technology for integrated circuits and conductive layers, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of cumbersome manufacturing process and complex fuse structure, and achieve the effect of simplifying the manufacturing process, simplifying the structure, and improving the yield.
Pending Publication Date: 2022-05-06
CHANGXIN MEMORY TECH INC
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Problems solved by technology
[0004] The present invention provides an integrated circuit device and its forming method, which are used to solve the existing problems of complex fuse structure and cumbersome manufacturing process, reduce the fusing energy of the fuse, and realize the improvement of the process yield of the integrated circuit device and the manufacturing process. cost reduction
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Embodiment Construction
[0042] The specific implementation of the integrated circuit device and its forming method provided by the present invention will be described in detail below in conjunction with the accompanying drawings.
[0043] This specific embodiment provides a method for forming an integrated circuit device, with figure 1 It is a flowchart of a method for forming an integrated circuit device in a specific embodiment of the present invention, with Figures 2A-2J It is a schematic cross-sectional view of the main process in the process of forming an integrated circuit device according to a specific embodiment of the present invention. Such as figure 1 , Figure 2A-Figure 2I As shown, the method for forming an integrated circuit device provided in this specific embodiment includes the following steps:
[0044] Step S11, providing a substrate 20, the substrate 20 includes a first region I and a second region II located outside the first region I, and the substrate 20 has a second region ...
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The invention relates to an integrated circuit device and a method of forming the same. The forming method of the integrated circuit device comprises the following steps: providing a substrate comprising a first region and a second region, wherein the substrate is internally provided with a first plug and a second plug; forming a first covering layer covering the substrate; forming a first opening for exposing the first plug in the first region; forming a first conductive layer in the first opening; forming an isolation layer covering the first conductive layer and the substrate; forming a contact hole for exposing the first conductive layer and a groove communicated with the contact hole in the first region, and forming a second opening for exposing the second plug in the second region; and forming a conductive connection layer in the contact hole, forming a second conductive layer in the groove, and forming a fuse wire in the second opening. According to the invention, the structure of the fuse wire is simplified, the fuse wire can be fused only with low energy, and the manufacturing process is simplified.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an integrated circuit device and a forming method thereof. Background technique [0002] A fuse is a resistive structure in an integrated circuit device. In the integrated circuit device, the purpose of adjusting the internal electrical function or electrical parameters of the integrated circuit is achieved by blowing the fuse. In an integrated circuit device with a double-layer damascene structure, the first metal layer, the second metal layer, and the metal connection layer between the first metal layer and the second metal layer are often used as a fuse. The wire structure can effectively avoid the overlay offset problem caused by the corrosion of the alignment marks. However, due to the complex structure of the fuse and the cumbersome manufacturing process, a large fusing energy is required in the subsequent fuse fusing process, and incomplete fusing oft...
Claims
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IPC IPC(8): H01L21/768H01L23/525H01L23/528
CPCH01L21/76877H01L23/5256H01L23/528H01L2221/1068H01L21/768H01L23/525
Inventor 王蒙蒙黄信斌
Owner CHANGXIN MEMORY TECH INC