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Semiconductor element and manufacturing method thereof

A semiconductor and component technology, applied in the field of making magnetoresistive random access memory components, can solve the problems of occupying chip area, power consumption, insufficient sensitivity, etc.

Pending Publication Date: 2022-05-06
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantages of the above-mentioned prior art generally include: larger chip area, more expensive manufacturing process, more power consumption, insufficient sensitivity, and susceptibility to temperature changes, etc., and it is necessary to further improve

Method used

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  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof

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Embodiment Construction

[0040] Please refer to Figure 1 to Figure 9 , Figure 1 to Figure 9 A schematic diagram of a method for fabricating an MRAM unit according to an embodiment of the present invention. Such as figure 1 As shown, first a substrate 12 is provided, such as a substrate 12 made of semiconductor material, wherein the semiconductor material can be selected from silicon, germanium, silicon germanium compound, silicon carbide (silicon carbide), gallium arsenide (gallium arsenide) etc., and a MRAM area 14 and a logic area 16 are preferably defined on the substrate 12 .

[0041] The substrate 12 may include active (active) elements such as metal-oxide semiconductor (MOS) transistors, passive (passive) elements, conductive layers, and interlayer dielectric layers (interlayerdielectric, ILD) 16, etc. A dielectric layer covers it. More specifically, the substrate 12 may include planar or non-planar (such as fin structure transistors) and other MOS transistor elements, wherein the MOS trans...

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Abstract

The invention discloses a semiconductor element and a manufacturing method thereof, and the method for manufacturing the semiconductor element comprises the steps: firstly, forming a magnetic tunneling junction (MTJ) on a substrate, then forming an upper electrode on the MTJ, forming an intermetallic dielectric layer surrounding the upper electrode and the MTJ, forming a contact layer on the intermetallic dielectric layer and the MTJ, and forming a semiconductor layer on the contact layer, patterning the contact layer to form a contact pad, wherein the contact pad is arranged on the upper electrode and the intermetallic dielectric layer at one side of the upper electrode;

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, in particular to a method for manufacturing a magnetoresistive random access memory (MRAM) element. Background technique [0002] It is known that the magnetoresistance (MR) effect is the effect that the resistance of the material changes with the change of the applied magnetic field. The definition of its physical quantity is the resistance difference under the presence or absence of a magnetic field divided by the original resistance, which is used to represent the resistance change. Rate. At present, the magnetoresistance effect has been successfully used in the production of hard disks, and has important commercial application value. In addition, using the characteristics of giant magnetoresistance materials having different resistance values ​​in different magnetization states, it can also be made into magnetic random access memory (MRAM), which has the advantage that it...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/22H01L43/08H01L43/12H10N50/01H10N50/10H10N50/80
CPCH10B61/00H10B61/22H10N50/10H10N50/01H10N50/80
Inventor 林大钧施易安蔡滨祥蔡馥郁
Owner UNITED MICROELECTRONICS CORP