Method for on-line auxiliary monitoring of ion implantation
An ion implantation and X-ray technology, which is applied in the field of online auxiliary monitoring ion implantation, can solve the problems that affect the production line yield, and the ion implantation process has no real-time online monitoring method, so as to improve the production yield and reduce the production cost.
Pending Publication Date: 2022-05-13
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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Problems solved by technology
[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an online auxiliary monitoring method for ion implantation, which is used to solve the problem that the ion implantation process in the prior art does not have a real-time online monitoring method, thereby affecting the production line yield. question
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[0025] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0026] see Figure 1 to Figure 5 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...
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The invention provides a method for on-line auxiliary monitoring of ion implantation. The method comprises the following steps: adding a plurality of measurement pads in pads for film thickness measurement in each die of a wafer; ion implantation is carried out in the to-be-implanted region of the wafer and ion implantation is carried out in the measurement pad at the same time; when the ion implantation is abnormal, obtaining an X-ray photoelectron spectroscopy signal value of the measurement pad; providing a linear equation of an X-ray photoelectron spectroscopy signal value and an ion implantation dose; substituting the X-ray photoelectron spectroscopy signal value of the measurement pad into the linear equation to obtain the actual ion implantation dose of the measurement pad; the actual ion implantation dose is compared with the refilling information, and if the comparison result is within the allowable difference value range, the refilling task is executed; and if the comparison result is not in the allowable difference value range, carrying out scrap treatment on the wafer. According to the invention, the actual operation condition of the wafer can be accurately judged, so that the on-line auxiliary monitoring of the ion implantation process is realized, the production cost is reduced, and the production yield is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an online auxiliary monitoring ion implantation method. Background technique [0002] In the manufacture of semiconductor wafers, the monitoring method of ion implantation process is usually offline (off line), mainly because the dose and energy of implanted ions are usually monitored by four-probe method for resistance testing. This destructive testing method It cannot be applied to online (in line) monitoring. [0003] During the ion implantation process, it is common for the ion implantation process to be interrupted due to abnormal or unexpected conditions such as machine ion beam instability, power supply fluctuations, and software crashes. Among them, the operation interruption caused by the instability of the ion beam can be continued through the top off task automatically generated by the ion implantation machine, which has high accuracy and has little impact on t...
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IPC IPC(8): H01L21/66H01L23/544H01L21/265
CPCH01L22/32H01L22/10H01L22/26H01L21/265
Inventor 张强强归琰
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD