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Array substrate, manufacturing method thereof and electronic paper display device

A technology of an array substrate and a manufacturing method, which is applied in the field of display devices, can solve problems such as abnormality and electronic ink crosstalk display, and achieve the effects of simple structure, good display effect, and good display effect

Pending Publication Date: 2022-05-13
SHENZHEN LAIBAO HI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of this, the present application provides an array substrate and its manufacturing method, and an electronic paper display device to solve the problems of electronic ink crosstalk and abnormal display caused by external light irradiating the transistor from the side of the array substrate

Method used

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  • Array substrate, manufacturing method thereof and electronic paper display device
  • Array substrate, manufacturing method thereof and electronic paper display device
  • Array substrate, manufacturing method thereof and electronic paper display device

Examples

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Embodiment 1

[0050] Please refer to figure 1 and figure 2 , Embodiment 1 of the first aspect of the present application proposes an array substrate 100 suitable for a dot-matrix electronic paper display device (Electronic Paper Display, EPD). The array substrate 100 includes a base substrate 10 , a first light shielding layer 20 , a thin film transistor 30 and a pixel electrode 40 .

[0051] The base substrate 10 can be a transparent substrate, such as a transparent glass substrate; in other embodiments, the base substrate 10 can also be a flexible substrate.

[0052] The first light-shielding layer 20 is disposed on the base substrate 10 , the first light-shielding layer 20 is opaque, and can prevent external light from entering from the side of the base substrate 10 and irradiating the thin film transistor 30 .

[0053]The thin film transistor 30 is disposed on the first light shielding layer 20 , that is, the thin film transistor 30 is disposed on a side of the first light shielding ...

Embodiment 2

[0066] Please refer to image 3 and Figure 4 Embodiment 2 of the first aspect of the present application proposes an array substrate 100, including a base substrate 10, a first light shielding layer 20 disposed on the base substrate 10, a thin film transistor 30 disposed on the first light shielding layer 20, and pixel electrode 40 .

[0067] The array substrate 100 provided in Embodiment 2 further includes a first insulating layer 70 , which is different from Embodiment 1 in that: the first insulating layer 70 and the pixel electrode 40 are sequentially stacked on the thin film transistor 30 , and the first insulating layer 70 is provided with There is an opening 71 ; the pixel electrode 40 is a conductive light-shielding material, and is electrically connected to the drain 34 through the opening 71 . The first insulating layer 70 functions as insulation and planarization.

[0068] Optionally, the pixel electrode 40 is made of metal or alloy, for example: AL (aluminum), A...

Embodiment 3

[0077] Please refer to Figure 5 and Figure 6 Embodiment 3 is similar to Embodiment 2. The array substrate 100 includes a base substrate 10, a first light shielding layer 20 disposed on the base substrate 10, a thin film transistor 30 disposed on the first light shielding layer 20, and a thin film transistor disposed on the base substrate 10. The first insulating layer 70 on the first insulating layer 70, and the pixel electrode 40 arranged on the first insulating layer 70, the pixel electrode 40 is a conductive light-shielding material, and is electrically connected to the drain electrode 34 through the opening 71 in the first insulating layer 70, The array substrate 100 has a relatively large aperture ratio.

[0078] Different from Embodiment 2, the array substrate 100 further includes a second light-shielding layer 50 disposed on the semiconductor layer 32 , and the second light-shielding layer 50 is on the same layer as the pixel electrodes 40 and arranged at intervals. ...

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Abstract

The invention is applicable to the field of display devices, and provides an array substrate, which comprises a substrate; the first shading layer is arranged on the substrate; the thin film transistor is arranged on the first shading layer and comprises a grid electrode, a semiconductor layer, a source electrode and a drain electrode, and the source electrode and the drain electrode are arranged on the two sides of the semiconductor layer; and the pixel electrodes are electrically connected with the drain electrodes of the corresponding thin film transistors. The first light shielding layer of the array substrate can shield external light irradiating to the thin film transistor, and the display effect is improved. The invention further provides a manufacturing method of the array substrate and an electronic paper display device.

Description

technical field [0001] The present application relates to the field of display devices, in particular to an array substrate, a manufacturing method thereof, and an electronic paper display device. Background technique [0002] Dot-matrix electronic paper products can rely on the reflection of external light to realize the display, do not need a backlight, and look more comfortable to the human eye, and have become a new generation of displays. However, when it is used in a natural strong light environment, part of the external light will enter the electronic paper product from the side through the transparent glass and irradiate the transistor, causing the leakage current of the transistor to increase, the leakage of the pixel capacitor, and the voltage to become low, resulting in E-ink has problems such as crosstalk, reduced contrast, poor display effect, and even garbled display. Contents of the invention [0003] In view of this, the present application provides an arr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1248H01L27/124H01L27/127
Inventor 颜金成王凯赵约瑟乔传兴
Owner SHENZHEN LAIBAO HI TECH
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