Semiconductor device and preparation method thereof

A semiconductor and device technology, which is applied in the field of semiconductor devices and their preparation, can solve the reliability problems of semiconductor devices and other problems, and achieve the effect of eliminating near-field peaks, improving distribution, and reducing horizontal far-field divergence angles

Active Publication Date: 2022-05-13
度亘核芯光电技术(苏州)有限公司
View PDF7 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this application is to overcome the defects of light field limitation in the prior art, to provide a semiconductor device and its preparation method, the semiconductor device and its preparation method It can overcome the defects of optical field limitation in the prior art, and at the same time solve the reliability problem of semiconductor devices when injecting large currents

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0079] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0080] It should ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a semiconductor device and a preparation method thereof. According to the semiconductor device, in the first direction, the extension length of the electric injection region is smaller than the extension length of the waveguide groove, carriers cannot be massively accumulated on the edge of the electric injection region, peaks with high power in the edge region in near-field light spots are eliminated, cavity surface damage caused by too strong local light field is avoided, and the reliability of the device is improved; 2, in the first direction, the second groove region is closer to the cavity surface on the same side than the first groove region; the second groove region in the stacking direction is shallower than the first groove region, the limiting effect of the vicinity of the cavity surface on the light field is reduced, therefore, high-order modes in the multimode laser limited in the ridge waveguide are diffused in the second groove region and consumed to a certain degree, the number of the modes is reduced, and the horizontal far-field divergence angle of the light beam is reduced. 3, in the first direction, the third groove region is closer to the cavity surface on the same side than the second groove region; in the stacking direction, the third groove region is deeper than the second groove region, and the third groove region plays a stronger role in limiting carriers when electric injection is carried out on the semiconductor device.

Description

technical field [0001] The application belongs to the technical field of semiconductors, and in particular relates to a semiconductor device and a preparation method thereof. Background technique [0002] Semiconductor devices are widely used due to their small size, light weight, low voltage, and high power. For example, it is widely used in optical fiber communication, optoelectronic integration, optical disc storage, pump light source, atmospheric environment detection, trace toxic gas analysis and molecular spectroscopy, etc. It is closely related to human life and brings a lot of convenience to people's life. [0003] A conventional semiconductor device has a ridge structure which belongs to a waveguide structure for confining carriers and an optical field. However, there are the following technical problems when limiting the light field: 1. There is a strong power peak in the near-field light spot, which is likely to cause damage to the cavity surface and cause device...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/22
CPCH01S5/2205
Inventor 杨国文唐松
Owner 度亘核芯光电技术(苏州)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products