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Miniature temperature compensation circuit for silicon photomultiplier

A technology of silicon photomultiplier tube and temperature compensation circuit, which is applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve the problems of high cost, large space occupied by the circuit system, high power consumption, etc., and achieve low cost and simple structure , the effect of low power consumption

Inactive Publication Date: 2022-05-17
CHINA INSTITUTE OF ATOMIC ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a circuit system takes up a lot of space, consumes a lot of power, and costs a lot

Method used

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  • Miniature temperature compensation circuit for silicon photomultiplier
  • Miniature temperature compensation circuit for silicon photomultiplier

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Embodiment Construction

[0013] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0014] Such as figure 1 As shown, U1 is the core chip of a conventional boost circuit (such as LT8410), which boosts the power supply voltage VCC to VOUT, and provides a bias voltage to the silicon photomultiplier (SiPM) through the resistor R3, and the signal of the SiPM is communicated through the capacitor C5 coupled to the output. C1, C2, C3, and C4 are filter capacitors, and L1 is the power inductor required by the switch circuit. These circuit elements are conventional designs of boost circuits. The principle of the present invention is to set a voltage divider circuit composed of a linear ...

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Abstract

The invention relates to a miniature temperature compensation circuit for a silicon photomultiplier, which comprises a booster circuit for providing bias voltage for the silicon photomultiplier, a voltage division circuit consisting of a linear thermistor and a common resistor is arranged on the booster circuit, reference voltage output by a booster circuit chip is divided, and the voltage division circuit is connected with the silicon photomultiplier. And the reference voltage changing along with the temperature is input to a feedback input pin of the booster circuit chip, and the booster circuit chip sets an output voltage value to the silicon photomultiplier according to the input voltage of the feedback input pin. The miniature temperature compensation circuit provided by the invention is simple in structure, low in cost and low in power consumption, and can greatly reduce the influence of temperature on SiPM gain.

Description

technical field [0001] The invention relates to printed circuit design technology, in particular to a miniature temperature compensation circuit for silicon photomultiplier tubes. Background technique [0002] The function of silicon photomultiplier tube (SiPM) is to convert incident photons into photoelectricity and multiply electrons. Generally, "gain" is used to describe its ability to multiply electrons. In practical application, the gain of SiPM is related to operating temperature and bias voltage. For the case of fixed bias voltage, the change of temperature will cause the breakdown voltage of SiPM to change, and the overvoltage (difference between bias voltage and breakdown voltage) will change accordingly, and the gain of SiPM is positively correlated with the overvoltage, which finally leads to the Gain varies significantly with temperature, affecting practical applications. [0003] Designing a bias voltage that varies with temperature reduces the effect of tempe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 李兴隆刘阳肖思敏吴建华骆志平庞洪超刘森林
Owner CHINA INSTITUTE OF ATOMIC ENERGY