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Preparation method of inverted trapezoidal photoresist side wall morphology and photoresist

A technology of photoresist and inverted trapezoid, which is applied in the direction of photosensitive material processing, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increasing the difficulty of stripping, improve the quality of pattern transfer, make the method easy to operate, and improve chip integration Effect on Yield

Pending Publication Date: 2022-05-20
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, after conventional photolithography, the sidewall of the photoresist has a positive trapezoidal sidewall shape, so that when the target material is deposited, the photoresist is completely covered, making it difficult for the stripping solution to penetrate the film of the target material into the dissolved photoresist, increasing the Difficulty of stripping

Method used

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  • Preparation method of inverted trapezoidal photoresist side wall morphology and photoresist

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Effect test

Embodiment 1

[0034] In this embodiment, the preparation method of the inverted trapezoidal photoresist sidewall morphology comprises the following steps:

[0035] (1) Pretreatment of the wafer: On the glue developer, pretreat the Si wafer with HMDS (hexamethyldisilazane) to enhance the surface adhesion, and then center it.

[0036] (2) Coating and pre-baking: Coat photoresist AZ6130 by spin coating with a thickness of 2.8um, then bake at 150°C for 60s, and then cool for 30s.

[0037] (3) Coating and pre-baking: Spin-coat another photoresist AZ703 with a thickness of 1.5um on the wafer that has been spin-coated with a layer of AZ6130 photoresist with a thickness of 2.8um.

[0038] (4) Exposure: set the exposure time to 430ms and the focus to -2.4um.

[0039] (5) Development: After optical exposure, the wafer is immersed in the developer solution, and developed for 60 seconds after the center is positioned to obtain a pattern.

[0040] (6) Hardening film: Harden the film at 120°C for 120s....

Embodiment 2

[0042] In this embodiment, the preparation method of the inverted trapezoidal photoresist sidewall morphology comprises the following steps:

[0043](1) Pretreatment of the wafer: On the glue developer, pretreat the Si wafer with trimethylsilyldiethylamine to enhance the surface adhesion, and then center it.

[0044] (2) Coating and pre-baking: Coat photoresist AZ6130 by spin coating with a thickness of 2.8um, then bake at 150°C for 60s, and then cool for 30s.

[0045] (3) Coating and pre-baking: Spin-coat another photoresist AZ703 with a thickness of 2.1 um on the wafer that has been spin-coated with a layer of AZ6130 photoresist with a thickness of 2.8 um.

[0046] (4) Exposure: set the exposure time to 500ms and the focus to -3.0um.

[0047] (5) Development: After optical exposure, the wafer is immersed in the developer solution, and developed for 60 seconds after the center is positioned to obtain a pattern.

[0048] (6) Hardening film: Harden the film at 120°C for 180s....

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Abstract

The invention provides a preparation method of inverted trapezoidal photoresist side wall morphology and photoresist. The preparation method comprises the following steps: preprocessing a wafer and carrying out center positioning; coating photoresist on the obtained wafer and pre-baking the wafer; coating the photoresist again and pre-baking; exposing, developing and hardening; according to the technical scheme provided by the invention, the controllability of the morphology of the side wall of the lift-off process mask layer is effectively improved, the accurate transfer of the pattern is realized, and the operation method is simple.

Description

technical field [0001] The invention relates to a semiconductor device preparation process, in particular to a preparation method for an inverted trapezoidal photoresist side wall morphology. Background technique [0002] In the process of device preparation, some materials are not easy to use photoresist as a mask to etch to prepare fine patterns. When some multi-layer metals are corroded alternately with different corrosive solutions, severe lateral undercutting will occur. Some corrosive solutions It will even corrode the underlying material, resulting in a large difference in size between the actual graphics and the design graphics, and even the disappearance of fine graphics, which cannot realize the precise transfer of graphics well, affecting chip integration and yield. [0003] In the photolithography process, these problems can be effectively solved by using a lift-off process. The lift-off process is a pattern transfer process technology that does not require an e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42H01L21/027
CPCG03F7/42H01L21/0274
Inventor 葛欢田亮姜春艳吴斌齐向
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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