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Metal bonding packaging structure and packaging process

A metal bonding and packaging process technology, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of inability to use, waste of cost, affecting the performance and service life of chip devices, and avoid heat. Damage, strong process compatibility, and the effect of avoiding device layer failure conditions

Pending Publication Date: 2022-05-24
安徽光智科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] 1. Metal bonding generally needs to heat and press the entire device layer, and the temperature required by different metal bonding processes is also inconsistent. Generally, the metal bonding temperature is between 200°C and 450°C. For example, the vacuum packaging effect is excellent. The Au-Sn bonding temperature is around 300°C, so the device layer that cannot withstand the process temperature of 300°C basically cannot use the Au-Sn combination metal bonding process, and can only use other bonding temperature conditions that are relatively low, but the bonding shear Metal combinations with poor shear force will affect the performance and service life of chip devices to a certain extent;
[0006] 2. Traditional metal bonding mainly uses a heating substrate that is the same size as the wafer to heat the wafer as a whole during the heating process. Such a heating system is wasteful in cost, and the substrate cannot be flexibly controlled during the bonding process. Heating temperature rise and fall

Method used

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  • Metal bonding packaging structure and packaging process
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Effect test

Embodiment 1

[0030] A kind of such as Figure 1 The metal bonding package structure shown, comprising a substrate wafer 1 and a cap wafer 2, the substrate wafer 1 is provided with a thermal resistance layer 3 and pad point, the thermal resistance layer 3 is provided with an insulating layer 4, and the cap wafer 2 and the insulation layer 4 are provided between the bonding layer 5. Apply current to the Pad point, so that the thermal resistance layer 3 heat up, insulation layer 4 as a thermal conductive layer, the insulation layer is made of materials with good insulation and strong thermal conductivity, the insulation layer 4 transmits the temperature to the bonding layer 5, and the thermal resistance layer 3 heats up to the required temperature of the bonding layer 5 to complete the bonding package.

[0031] The above-mentioned packaging structure does not need to heat the substrate wafer and cap wafer as a whole, which can effectively save process costs, and the temperature can be controlled b...

Embodiment 2

[0033]There is provided a packaging process for the metal bonding package structure described in Example 1, using a current bonding package, see the specific packaging process Figure 2 , which roughly includes the following steps:

[0034] S1. Select two wafers as substrate wafers and cap wafers respectively, perform standard RCA cleaning of the wafers, and wash them with deionized water and purge them with nitrogen;

[0035] S2. Plate the surface of the substrate wafer with Pt or other metal film layers with high resistivity and high melting point as a thermal resistance layer, and use the process of peeling and steaming to pattern the metal film layer, the thickness range of the metal film layer can be selected between 50nm-5000nm, and the specific thickness is adjusted according to the bonding temperature; after the patterning of the metal film layer, the substrate wafer is washed and prepared;

[0036] S3. On the patterned metal film layer formed by S1, a layer of AlN or other...

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Abstract

The invention relates to the technical field of electronic packaging, and discloses a metal bonding packaging structure and packaging technology, the packaging structure comprises a substrate wafer and a cap wafer, the substrate wafer is provided with a thermal resistance layer and a Pad point, the thermal resistance layer is provided with an insulating layer, and a bonding layer is arranged between the cap wafer and the insulating layer. According to the packaging structure, the thermal resistance layer can be directly heated to a certain temperature by applying the current to the Pad point of the substrate wafer, then heat is transferred to the bonding layer through the insulating layer, the temperature can be adjusted and controlled through the current, the mode that a heating substrate system needs to be adopted for heating in the traditional packaging technology is overturned, and the packaging efficiency is improved. The whole wafer device does not need to be heated, and the conditions of thermal damage to the device layer in the chip and failure of the device layer caused by whole heating of the packaging structure are avoided.

Description

Technical field [0001] The present invention relates to the field of electronic packaging technology, specifically, to a metal bonding packaging structure and packaging process. Background [0002] Wafer-level packaging technology mainly includes direct bonding, anode bonding, eutectic bonding, glass slurry bonding and other bonding technologies. Regardless of the bonding technology used, it is crucial to have good compatibility with the chip device process, otherwise the incompatible bonding process will largely lead to the reduction or even failure of the chip function. Choosing the right bonding process for the chip vacuum package will not only not cause physical, chemical, biological and other harm to the chip during the process tape-out process, but also provide a stable, closed, high vacuum and safe workplace for the chip. Therefore, good vacuum packaging technology plays a decisive role in the long-term stable operation of the chip. [0003] At present, metal bonding is th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/488H01L21/60
CPCH01L24/08H01L24/03H01L24/82H01L2224/08148H01L2224/82234H01L2224/82238
Inventor 赵龙姚浩强李海涛李兆营张磊梁靖
Owner 安徽光智科技有限公司