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Ultrahigh preferred orientation flexible CuxSe thermoelectric thin film and preparation method and application thereof

A technology of preferential orientation and thermoelectric thin film, which is applied in the manufacture/processing of thermoelectric devices, junction lead-out materials of thermoelectric devices, and the manufacture of final products, etc. Easy-to-control effects

Pending Publication Date: 2022-05-24
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a kind of ultra-high preferred orientation flexible Cu x Se thermoelectric thin film and its preparation method and application, aiming at solving existing Cu 2 The thermoelectric performance of Se thin film is still low compared to its bulk material

Method used

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  • Ultrahigh preferred orientation flexible CuxSe thermoelectric thin film and preparation method and application thereof
  • Ultrahigh preferred orientation flexible CuxSe thermoelectric thin film and preparation method and application thereof
  • Ultrahigh preferred orientation flexible CuxSe thermoelectric thin film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Using Cu 2 Se alloy target and Cu target, magnetron co-sputtering on polyimide flexible substrate (parameter setting: bottom vacuum lower than 8 × 10 -4 Pa, working vacuum is 0.5Pa, Ar flow is 40sccm, Cu 2 The sputtering power of the Se alloy target is 55W, the sputtering power of the Cu target is 15W, and the Cu target has a sputtering power of 15W. 2 The sputtering time of the Se alloy target was 30 min, and the co-sputtering time of the Cu target was 3 min), and then heat-treated at 300 °C for 30 min to prepare ultra-high preferentially oriented flexible Cu. 1.99 Se thermoelectric thin film.

Embodiment 2

[0047] Using Cu 2 Se alloy target and Cu target, magnetron co-sputtering on polyimide flexible substrate (parameter setting: bottom vacuum lower than 8 × 10 -4 Pa, working vacuum is 0.5Pa, Ar flow is 40sccm, Cu 2 The sputtering power of the Se alloy target is 55W, the sputtering power of the Cu target is 15W, and the Cu target has a sputtering power of 15W. 2 The sputtering time of the Se alloy target was 30 min, and the co-sputtering time of the Cu target was 5 min), and then heat-treated at 300 °C for 30 min to prepare ultra-high preferentially oriented flexible Cu. 2.05 Se thermoelectric thin film.

Embodiment 3

[0049] Using Cu 2 Se alloy target and Cu target, magnetron co-sputtering on polyimide flexible substrate (parameter setting: bottom vacuum lower than 8 × 10 -4 Pa, working vacuum is 0.5Pa, Ar flow is 40sccm, Cu 2 The sputtering power of the Se alloy target is 55W, the sputtering power of the Cu target is 15W, and the Cu target has a sputtering power of 15W. 2 The sputtering time of the Se alloy target was 30 min, and the co-sputtering time of the Cu target was 7 min), and then heat-treated at 300 °C for 30 min to prepare ultra-high preferentially oriented flexible Cu. 2.17 Se thermoelectric thin film.

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Abstract

The invention discloses an ultrahigh preferred orientation flexible CuxSe thermoelectric thin film and a preparation method and application thereof, and the preparation method of the ultrahigh preferred orientation flexible CuxSe thermoelectric thin film comprises the steps: providing a flexible substrate; a Cu2Se alloy target material and a Cu target material are adopted, magnetron co-sputtering is carried out on the flexible substrate, then heat treatment is carried out, the ultra-high preferred orientation flexible CuxSe thermoelectric thin film is prepared, and the value range of x is 0.5-2.5. According to the preparation method, the flexible CuxSe thermoelectric thin film with ultrahigh (010) orientation and excellent thermoelectric performance is prepared on the high-temperature-resistant flexible substrate by adopting a Cu2Se alloy target material and a Cu target material and utilizing a magnetron co-sputtering method. The preparation method provided by the invention is simple and convenient to operate and low in cost, components of the thermoelectric thin film and growth orientation of the thermoelectric thin film are easy to control, the prepared flexible CuxSe thermoelectric thin film is high in quality, good in thermoelectric performance and good in repeatability, and large-area industrial production can be realized.

Description

technical field [0001] The invention relates to the field of thermoelectric materials, in particular to an ultra-high preferentially oriented flexible Cu x Se thermoelectric thin film and its preparation method and application. Background technique [0002] Thermoelectric material is a functional material that can directly convert thermal energy and electrical energy into each other. Thermoelectric devices prepared from it can be widely used in semiconductor power generation, refrigeration and other fields. In recent years, due to the rapid development of miniature semiconductor devices and wearable electronic products, the transformation of thermoelectric materials and devices towards miniaturization, miniaturization and flexibility has been promoted. Among them, thermoelectric thin films prepared based on inorganic materials have more application prospects in the field of portable / wearable devices due to their small size, light weight, and easy miniaturization. Therefore,...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/16C23C14/06C23C14/35
CPCC23C14/352C23C14/0623H10N10/852H10N10/01Y02P70/50
Inventor 郑壮豪张栋梁陈跃星
Owner SHENZHEN UNIV