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Lateral bipolar field effect mode hydrid transistor and method for mfg. same

A drain and base technology, used in transistors, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., to achieve the effect of simple components

Inactive Publication Date: 2004-04-14
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Another issue is achieving a predetermined high gain and withstand voltage, and external control of the gain of the bipolar element

Method used

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  • Lateral bipolar field effect mode hydrid transistor and method for mfg. same
  • Lateral bipolar field effect mode hydrid transistor and method for mfg. same
  • Lateral bipolar field effect mode hydrid transistor and method for mfg. same

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Experimental program
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Effect test

Embodiment Construction

[0037] figure 1 is a cross-sectional view of a vertical bipolar NPN-transistor VBIP1 in series with two parallel field effect transistors JFET1 and IGFET1 according to the prior art. The upper surface of a semiconductor substrate 1 , for example a silicon substrate, is oxidized to form an electrically insulating layer 2 of silicon dioxide. Above layer 2 is a relatively thin layer 3 of monocrystalline silicon, which is the active layer of transistor devices VBIP1, JFET1 and IGFET1. The active layer has a relatively low carrier concentration, denoted by n in the figure. Inside the single crystal layer 3, the element region 4 is separated from the peripheral parts 4a and 4b by an isolation layer 5, which may be made of silicon oxide or a reverse-biased PN junction. The isolation layer 5 is diffused from the surface of the single crystal layer 3 down to the insulating layer 2, and completely surrounds the transistors VBIP1, JFET1 and IGFET1. Thus, element region 4 is completely...

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PUM

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Abstract

The invention relates to a semiconductor device and a method in this device, wherein the semiconductor device operates completely or partly in lateral extension. The semiconductor device comprises at least two high-voltage lateral bipolar transistors with at least two mutually opposite emitter / base regions, which are placed at the surface of the epi-taxial layer at a mutual distance such that an intermediate common collector region is formed. The common collector region can be completely depleted when the device has a voltage applied and by using a lateral depletion of said collector region, the voltage durability of the semiconductor device can be determined lithographically by the distance between the doped regions comprised in the device. Furthermore, undesired parasitic components, which are dependent on the quality of the active layer of the device, resistivity and substrate potential, can be eliminated or suppressed.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof. Background technique [0002] To realize high-voltage bipolar transistors, currently used technologies are based on transistors that are placed on epitaxial layers and operate vertically. In other words, the depletion region of the transistor collector emerges vertically downwards towards the buried oxide layer, thereby isolating the transistor from the semiconductor substrate (so-called silicon-on-insulator (SOI)). European Patent Application EP0 623 951A1 and Torkel Arnborg and Andrej Litwin, IEEE Transactions on Electronic Devices, Vol.42, No.1, January 1995, entitled "Analysis of New High-Voltage Bipolar Silicon-On-Insulator Transistor with Fully Depleted Collector" article describes this approach. According to EP 0 623 951 A1, bipolar transistors also have a series-connected JFET operating in a scale-out manner. A significant advantage of this approach i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/73H01L21/331H01L21/8249H01L27/06H01L27/07H01L27/095
CPCH01L27/0722H01L27/07
Inventor A·瑟德贝格
Owner INFINEON TECH AG