Optical Gyro Integrated Chip Based on Silicon Carbide Photonic Integration Platform on Insulator Substrate

Abstract

The embodiment of the present invention discloses an optical gyro integrated chip based on a silicon carbide photonics integration platform on an insulating substrate, comprising a first fiber-SiC waveguide coupler, a second fiber-SiC waveguide coupler, a first 3dB beam splitter, The second 3dB splitter, the first phase shifter, the second phase shifter, the third fiber-SiC waveguide coupler, the fourth fiber-SiC waveguide coupler; the difference between the first and second fiber-SiC waveguide couplers Connect to two branches of the first 3dB beam splitter; the first 3dB beam splitter is connected to the fundamental waveguide of the second 3dB beam splitter; one branch of the second 3dB beam splitter is connected to the third fiber through the first phase shifter ‑SiC waveguide coupler, and the other branch connects to the fourth fiber ‑SiC waveguide coupler. The invention can effectively improve the stability and reliability of the fiber optic gyroscope while ensuring the accuracy of the fiber optic gyroscope, improve the multiple performances of the fiber optic gyroscope, and realize the smaller size, lower power consumption, lower cost, simpler structure design and craft.

Description

technical field [0001] The invention relates to the technical field of integrated optics and inertial sensing, in particular to an optical gyro integrated chip based on a silicon carbide photonics integrated platform on an insulating substrate. Background technique [0002] Because it can achieve high-precision and high-reliability positioning, attitude control and absolute direction measurement, fiber-optic gyroscopes are widely used in space technology, military applications, and many civil fields such as car navigation and robotics. Fiber optic gyroscopes generally realize the generation, modulation and detection of optical signals based on separate fiber optic devices. Different fiber optic devices are spliced ​​by pigtails to form Sagnac interference optical circuits, which inevitably generate parasitic reflections at the connection point, additional insertion loss and pairing. The external environment is sensitive to polarization mismatch and other problems, which in t...

AI Technical Summary

Problems solved by technology

Due to the lattice constant mismatch with Si, there are interface defects in the 3C-SiC film grown directly on the silicon surface by heteroepitaxy, resulting in large waveguide loss; while the temperature required for 4H-SiC epitaxy is higher than the melting temperature of the silicon substrate , cannot be directly epitaxially grown on silicon substrates

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