Charge elimination circuit module, MRAM (Magnetic Random Access Memory) storage unit reading circuit and storage system

Abstract

The invention discloses a charge eliminating circuit module, an MRAM (Magnetic Random Access Memory) storage unit reading circuit and a storage system. The reading circuit comprises a first bit line capacitor, a second bit line capacitor, a bit line charge elimination module, a coupling amplification module, a coupling charge elimination module and a comparison latch module, and the bit line charge elimination module can discharge two to-be-compared bit lines to the same low level or charge the two to-be-compared bit lines to the same high level. The coupling amplification module not only can discharge two input ends to the same low level, but also can amplify signals of the input ends, and the coupling charge elimination module can discharge two output ends of the coupling amplification module to the same low level or charge the two output ends to the same high level. The influence of the charge difference on the two node capacitors after pre-charging, the mismatch error of the two branches connecting the two node capacitors and the residual charge on the node capacitor after the last reading is completed on the reading accuracy is prevented.

Description

technical field [0001] The invention relates to the technical field of MRAM reading and writing, in particular to a charge elimination circuit module, an MRAM storage unit readout circuit and a storage system. Background technique [0002] The core structure of the MRAM (Magnetoresistive Random Access Memory, magnetic random access memory) storage unit is a magnetic tunnel junction (Magnetic Tunneling Junction, referred to as: MTJ), which is composed of two magnetic layers sandwiched by a very thin non-magnetic isolation layer. , the two magnetic layers are the free layer and the fixed layer, respectively. The fixed layer has strong coercivity and the magnetic moment does not change, while the magnetic moment of the free layer is converted under the influence of an external current. MTJ mainly has two states of high resistance and low resistance. When the magnetic moments of the free layer and the fixed layer are in the same direction, electrons easily pass through the two m...

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Problems solved by technology

[0005] Although this kind of sensitive amplifier can achieve comparison latch without DC path and low read voltage, it is too dependent on the amount of charge. The mismatch error of the two branches and the residual charge on the node capacitance after the last readout will have a great impact on the next readout, resulting in errors in the readout results

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