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Transistor aging parameter detection device and aging degree prediction system and method

A technology of aging parameters and detection devices, which is applied in the direction of bipolar transistor testing, measuring devices, semiconductor working life testing, etc., and can solve problems such as complicated operation, difficult parameter values ​​to guide practical applications, waste of time cost and economic cost, etc.

Pending Publication Date: 2022-06-21
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, there are still many problems in the device selection process and vehicle operation and maintenance process of urban rail traction grade IGBT. The main problems are as follows: First, due to the stray parameters, junction temperature, Humidity and other factors are different from the actual environment, resulting in a large difference between the data in the data sheet and the actual working conditions, and the parameter values ​​​​referred to in the selection process are difficult to guide the actual application; second, the test equipment is heavy and the operation is complicated, which is difficult to combine with reality Evaluating device performance, aging and failure levels in the engineering environment is not conducive to the testing work of on-site maintenance and maintenance personnel; Causes waste of time cost and economic cost, which is not conducive to improving system reliability

Method used

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  • Transistor aging parameter detection device and aging degree prediction system and method
  • Transistor aging parameter detection device and aging degree prediction system and method
  • Transistor aging parameter detection device and aging degree prediction system and method

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Embodiment 1

[0042] likefigure 1 , figure 2 As shown, in this embodiment 1, a portable IGBT module aging parameter detection device is provided, and its circuit topology design and function description are as follows:

[0043] The device is divided into three parts: the first part is the test main circuit and the measurement data display part. / DC power supply), boat type power switch S1 (ie power switch 15), output button S4 (self-locking) (ie output button 4) and high voltage relay K1 (ie first relay 5), potentiometer, 0~5000V high voltage power supply module (ie power supply module 7), capacitor C1, voltage digital display meter (ie voltmeter 11), voltage divider 10, microampere current digital display meter (ie ammeter 9), output socket 8; the second part is the protection part, The devices used include the input side fuse FU1, the output side ceramic fuse FU2, the discharge button S5 (non-self-locking) (ie the discharge button 3), the high voltage relay K2 (ie the second relay 6), t...

Embodiment 2

[0054] like figure 1 As shown, in this embodiment 2, a portable IGBT module aging parameter detection device is provided, and its circuit topology design and function description are as follows:

[0055] The device is divided into three parts: the first part is the test main circuit and the measurement data display part. / DC power supply), boat type power switch S1 (ie power switch 15), output button S4 (self-locking) (ie output button 4) and high voltage relay K1 (ie first relay 5), potentiometer, 0~5000V high voltage power supply module (ie power supply module 7), capacitor C1, voltage digital display meter (ie voltmeter 11), voltage divider 10, microampere current digital display meter (ie ammeter 9), output socket 8; the second part is the protection part, The devices used include the input side fuse FU1, the output side ceramic fuse FU2, the discharge button S5 (non-self-locking) (ie the discharge button 3), the high voltage relay K2 (ie the second relay 6), the discharg...

Embodiment 3

[0076] The third embodiment provides a transistor aging degree prediction system, including:

[0077] The transistor aging parameter detection device according to Embodiment 1 or Embodiment 2 is used to obtain the off-voltage and off-current of the transistor to be predicted;

[0078] The prediction module is used to process the obtained cut-off voltage and cut-off current by using a pre-trained prediction model to obtain the aging state of the transistor to be predicted in the next time interval; wherein, the prediction model is obtained by training a training set, and the The training set includes multiple sets of data, wherein each set of data includes a set of cut-off voltages and cut-off currents, and labels indicating the aging states of transistors corresponding to the set of cut-off voltages and cut-off currents.

[0079] In this embodiment 3, the above-mentioned transistor aging degree prediction system is used to realize a transistor aging degree prediction method, i...

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Abstract

The invention provides a transistor aging parameter detection device and an aging degree prediction system and method, and belongs to the technical field of transistors, the transistor aging parameter detection device comprises a switching power supply for converting an external AC power supply into a DC power supply, a power supply module connected with the switching power supply, and a power supply switch arranged between the switching power supply and the adjustable power supply module; the power supply module is connected with a capacitor, a potentiometer, a voltage digital display meter, a voltage divider and a current digital display meter; an output button is arranged between the switching power supply and the adjustable power supply module, and the output button is connected with a first relay. According to the invention, parameter detection can be carried out on the cut-off voltage and the cut-off current of the IGBT by flexibly combining an actual engineering environment, and the aging degree of the IGBT is predicted based on the detected cut-off voltage and the cut-off current; the detected cut-off voltage and the detected cut-off current are static parameters of the IGBT and can reflect the performance, the failure and the health degree of the IGBT; the method can play a guiding role in the early-stage model selection process, the operation and maintenance failure judgment and the preventive maintenance process of the IGBT by field personnel.

Description

technical field [0001] The invention relates to the technical field of rail transit equipment, in particular to an aging parameter detection device, an aging degree prediction system and a method of an insulated gate bipolar transistor. Background technique [0002] At present, there are still many problems in the device selection process and vehicle operation and maintenance process of urban rail traction IGBTs. The main problems are as follows: First, due to the stray parameters, junction temperature, junction temperature, Humidity and other factors are different from the actual environment, resulting in a large difference between the data in the data manual and the actual working conditions, and the parameter values ​​referenced in the selection process are difficult to guide the actual application; second, the test equipment is heavy, the operation is complicated, and it is difficult to combine the actual Evaluation of device performance, aging and failure levels in the ...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2608G01R31/2642
Inventor 王磊贾利民周明超刁利军徐春梅东野忠昊沙妍蓓
Owner BEIJING JIAOTONG UNIV