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Photoresist underlayer composition and patterning method

A photoresist layer and photoresist technology are applied in the field of materials for manufacturing electronic devices and semiconductor manufacturing, and can solve problems such as metal infiltration process limitations

Pending Publication Date: 2022-06-21
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of thick SOC films, the metal infiltration process may be limited, for example, if the metal precursors interact with the film components during diffusion and are hindered from diffusing to the bottom of the film.

Method used

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  • Photoresist underlayer composition and patterning method
  • Photoresist underlayer composition and patterning method
  • Photoresist underlayer composition and patterning method

Examples

Experimental program
Comparison scheme
Effect test

example

[0141] Gel permeation chromatography (GPC). The number-average molecular weight and weight-average molecular weight of the polymer (M n and M w ) and the polydispersity (PDI) value (M w / M n ) was measured by GPC on an Agilent 1100 series LC system equipped with an Agilent 1100 series refractive index and MiniDAWN light scattering detector (Wyatt Technology Co.). Samples were dissolved in HPLC grade THF at a concentration of approximately 10 mg / mL, filtered through a 0.45 μm syringe filter, and injected into four Shodex columns (KF805, KF804, KF803 and KF802). A flow rate of 1 mL / min and a temperature of 35°C were maintained. The column was calibrated with a narrow molecular weight PS standard (EasiCal PS-2, Polymer Laboratories, Inc.).

example P1

[0142] Example P1: Poly(arylene ether)

[0143] To a round bottom flask was added 50.0 g of 3,3'-(oxybis-1,4-phenylene)bis(2,4,5-triphenylcyclopentadienone)(DPO-CPD), 11.35 g 3,5-diethynylphenol (DEP) and 370.0 g gamma-butyrolactone (GBL), and the mixture was heated at 135°C for 3 hours. The reaction was cooled to room temperature and added to 5 liters (L) of a 4:1 mixture of isopropanol (IPA):water and stirred for 30 minutes. The brown solid was collected by vacuum filtration. The solid was stirred in 3 L of water for 2 hours. The slurry was filtered by vacuum filtration and dried in a vacuum oven at 65°C for two days. 60 g of P1 were collected. GPC analysis yields M w was 4970 Da and the PDI was 1.8.

example P2、 example P3 and example P4

[0145] The polymers of Example P2 and Example P3 were prepared using a procedure similar to that of Example P1, except that the respective monomers were used in the appropriate molar amounts to provide the desired polymers. Example P4 was obtained from PolyK Technologies (Matrimid 5218). The polymers of Example P1, Example P2, Example P3, and Example P4 are listed and summarized in Table 1.

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Abstract

A method of forming a pattern on a substrate, the method comprising: forming a photoresist underlayer on a surface of the substrate, where the photoresist underlayer is formed from a composition comprising a polymer and a solvent, and the photoresist underlayer has a carbon content greater than 47 at%; treating the photoresist underlayer with a metal precursor, wherein the metal precursor penetrates into a free volume of the photoresist underlayer; and exposing the metal precursor treated bottom layer of photoresist to an oxidizing agent to provide a metallized bottom layer of photoresist.

Description

technical field [0001] The present invention relates generally to the field of manufacturing electronic devices, and more particularly to the field of materials used in semiconductor manufacturing. Background technique [0002] Where high aspect ratios are desired, multi-layer resist processes (eg, three- and four-layer processes) have been designed. Such multi-layer processes use a top layer of resist, one or more intermediate layers, and a bottom layer (or underlayer). In such multilayer resist processes, the top photoresist layer is imaged and developed in a typical manner to provide a resist pattern. The pattern is then transferred to one or more intermediate layers, typically by etching. Each intermediate layer is selected to have sufficient etch selectivity so that different etching processes, such as different plasma etchings, can be used for pattern transfer. Finally, the pattern is transferred to the bottom layer by etching such as reactive ion etching (RIE). Su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/09G03F7/004
CPCG03F7/09G03F7/091G03F7/004C08G73/1039C08G73/1071C08G73/1053C08L79/08G03F7/094C08G65/4012C08L71/00G03F7/11G03F7/20C09D171/12C08G65/4043C08G65/4037C08G73/0672C09D179/04C08F220/1818C09D133/10C23C16/0272C23C16/20C23C16/45523G03F7/167G03F7/427H01L21/0276H10B41/20H10B43/20
Inventor J·凯茨M·芬奇P·J·拉博姆山田晋太郎S·M·科莱
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC