Systems and methods for mitigating crack growth in semiconductor die manufacturing

Abstract

Systems and methods for mitigating crack propagation during semiconductor die fabrication are disclosed herein. The method includes forming a hole in a first side of a wafer substrate opposite a second side. The wafer substrate has an active component at the second side. Each aperture extends from the first side to the second side and extends within the wafer substrate to an intermediate depth such that a bottom of the aperture is vertically spaced from the active component on the second side. The hole is configured to inhibit longitudinal propagation of a crack in the wafer substrate across the wafer substrate. The method also includes back-grinding the first side of the wafer substrate after forming the hole to thin the wafer substrate. The method also includes dicing the wafer substrate after back grinding to separate the individual semiconductor dies from each other.

Description

technical field [0001] The present disclosure generally relates to methods for addressing damage to semiconductor dies. In particular, the present technology relates to methods for mitigating crack propagation during fabrication of semiconductor dies. Background technique [0002] Individual semiconductor dies are typically batch fabricated on semiconductor wafers and then divided into individual semiconductor dies. As the dimensions of individual semiconductor dies continue to shrink, batch manufacturing processes can increase throughput and reduce the difficulty of handling individual semiconductor dies. Because each wafer can contain multiple individual semiconductor dies, several steps are typically taken to protect the wafer substrate from damage. In particular, the fabrication process often includes sub-processes to protect the wafer substrate from cracking and causing other defects that can damage the wafer substrate. The cracks can destroy individual semiconductor...

AI Technical Summary

Problems solved by technology

However, as thinner die are formed and processed, cracks and other defects in the wafer substrate continue to appear

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