Thin film transistor substrate and display device including the same

Abstract

The present disclosure relates to a thin film transistor substrate and a display device including the same. An exemplary embodiment of the present disclosure provides a thin film transistor including an oxide semiconductor layer on a substrate; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer at least partially overlapping the oxide semiconductor layer; an interlayer insulating layer on the gate electrode; and a source electrode and a drain electrode on the interlayer insulating layer. The oxide semiconductor layer includes a channel portion overlapping the gate electrode and a connection portion at least partially not overlapping the gate electrode, the source electrode and the drain electrode are in contact with the connection portion of the oxide semiconductor layer, the interlayer insulating layer is in contact with the connection portion of the oxide semiconductor layer, a hydrogen concentration of the connection portion is higher than a hydrogen concentration of the channel portion, and a hydrogen concentration of the interlayer insulating layer is lower than a hydrogen concentration of the channel portion. And the interlayer insulating layer, the source electrode, and the drain electrode are in contact with the connection portion.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to Korean Patent Application No. 10-2020-0188805 filed in the Korean Intellectual Property Office on December 31, 2020, the disclosure of which is incorporated herein by reference. technical field [0003] The present disclosure relates to a thin film transistor substrate and a display device including the thin film transistor substrate. Background technique [0004] Thin film transistors can be fabricated on glass substrates or plastic substrates, so that they are widely used as switching elements or driving elements of display devices such as liquid crystal display devices or organic light emitting devices. [0005] According to the material constituting the active layer, thin film transistors can be classified into amorphous silicon thin film transistors, polysilicon thin film transistors, and oxide semiconductor thin film transistors. An amorphous silicon thin film transistor uses a...

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Problems solved by technology

[0009] However, the oxide semiconductor layer of the oxide semiconductor thin film transistor is damaged during a patterning process including etching or annealing of the manufacturing process, so that the driving stability and reliability of the thin film transistor may decrease

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