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Infrared quantum dot layer, preparation method of infrared quantum dot layer, infrared detector and preparation method of infrared detector

A quantum dot layer and quantum dot technology, applied in chemical instruments and methods, semiconductor devices, luminescent materials, etc., can solve problems such as high cost, high difficulty, and complicated process methods, and achieve the goal of reducing the requirements for the preparation environment and reducing the preparation cost Effect

Active Publication Date: 2022-07-05
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology

Therefore, infrared materials are usually limited to narrow-band semiconductor materials such as III-V, IV-VI, and II-VI groups, and these materials are mainly based on molecular epitaxy when used to form infrared sensitive layers, and need to be grown in a high vacuum environment On a suitable substrate, the process method is complex and difficult, the yield is low, and the cost is high

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[0067] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features in the embodiments may be combined with each other under the condition of no conflict.

[0068] Many specific details are set forth in the following description to facilitate a full understanding of the present disclosure, but the present disclosure can also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only a part of the embodiments of the present disclosure, and Not all examples.

[0069] The infrared quantum dot layer, the infrared detector and the preparation method thereof provided by the embodiments of the present disclosure can be used in the field of optical detection and sensing, wherein the use of the in-band transition of the mat...

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Abstract

The invention relates to an infrared quantum dot layer and a preparation method thereof, and an infrared detector and a preparation method thereof, and the preparation method of the infrared quantum dot layer comprises the steps: dissolving a first-type primer of a first dosage and a first-type primer of a second dosage in a first ligand solution, and correspondingly obtaining a first-type precursor solution of a first doping concentration and a first-type precursor solution of a second doping concentration, the second dosage is not equal to the first dosage; dissolving a first type of first primer with a second dosage in the first ligand solution to obtain a first type of precursor solution with a second doping concentration; and correspondingly obtaining infrared quantum dots with different doping concentrations based on the first type precursor solution and the second type precursor solution with different doping concentrations, and further forming a first infrared quantum dot sub-layer and a second infrared quantum dot sub-layer so as to construct the in-band transition type PN junction. Therefore, the in-band transition type infrared quantum dot layer is formed, and the detection accuracy can be improved; and based on a solution method for preparation, the method is simple, the process difficulty is relatively low, and the cost is relatively low.

Description

technical field [0001] The present disclosure relates to the technical field of optical detection sensors, and in particular, to an infrared quantum dot layer and a preparation method thereof, an infrared detector and a preparation method thereof. Background technique [0002] Infrared photoelectric detection technology can break through human visual barriers, use photoelectric technology to passively detect infrared radiation emitted by objects, and has the advantages of all-weather imaging, large penetration distance, and small weather-affected factors. It is used in military reconnaissance, medical diagnosis and It is widely used in many fields such as industrial inspection. [0003] Among them, since the photoelectric effect requires the incident photon energy to be higher than the material band gap, the current infrared detection element mainly uses the inter-band transition (ie inter-band transition) to achieve photoelectric response; due to the small photon energy of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88B82Y20/00B82Y40/00H01L31/0352H01L31/101H01L31/18
CPCC09K11/881B82Y20/00B82Y40/00H01L31/035218H01L31/101H01L31/18H01L31/1828
Inventor 陈梦璐郝群唐鑫罗宇宁赵雪
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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