Infrared quantum dot layer, preparation method of infrared quantum dot layer, infrared detector and preparation method of infrared detector

Abstract

The invention relates to an infrared quantum dot layer and a preparation method thereof, and an infrared detector and a preparation method thereof, and the preparation method of the infrared quantum dot layer comprises the steps: dissolving a first-type primer of a first dosage and a first-type primer of a second dosage in a first ligand solution, and correspondingly obtaining a first-type precursor solution of a first doping concentration and a first-type precursor solution of a second doping concentration, the second dosage is not equal to the first dosage; dissolving a first type of first primer with a second dosage in the first ligand solution to obtain a first type of precursor solution with a second doping concentration; and correspondingly obtaining infrared quantum dots with different doping concentrations based on the first type precursor solution and the second type precursor solution with different doping concentrations, and further forming a first infrared quantum dot sub-layer and a second infrared quantum dot sub-layer so as to construct the in-band transition type PN junction. Therefore, the in-band transition type infrared quantum dot layer is formed, and the detection accuracy can be improved; and based on a solution method for preparation, the method is simple, the process difficulty is relatively low, and the cost is relatively low.

Description

technical field [0001] The present disclosure relates to the technical field of optical detection sensors, and in particular, to an infrared quantum dot layer and a preparation method thereof, an infrared detector and a preparation method thereof. Background technique [0002] Infrared photoelectric detection technology can break through human visual barriers, use photoelectric technology to passively detect infrared radiation emitted by objects, and has the advantages of all-weather imaging, large penetration distance, and small weather-affected factors. It is used in military reconnaissance, medical diagnosis and It is widely used in many fields such as industrial inspection. [0003] Among them, since the photoelectric effect requires the incident photon energy to be higher than the material band gap, the current infrared detection element mainly uses the inter-band transition (ie inter-band transition) to achieve photoelectric response; due to the small photon energy of ...

AI Technical Summary

Problems solved by technology

Therefore, infrared materials are usually limited to narrow-band semiconductor materials such as III-V, IV-VI, and II-VI groups, and these materials are mainly based on molecular epitaxy when used to form infrared sensitive layers, and need to be grown in a high vacuum environment On a suitable substrate, the process method is complex and difficult, the yield is low, and the cost is high

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