Supercharge Your Innovation With Domain-Expert AI Agents!

Method for etching SiO2 on surface of wafer and passivating wafer at same time

A wafer and etching system technology, applied in sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, climate sustainability, etc., can solve problems such as pollution and re-oxidation, reduce process steps, improve ecology and economy side, to avoid pollution and re-oxidation effect

Pending Publication Date: 2022-07-05
PERIC SPECIAL GASES CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to ensure the cleanliness of its initial surface, the traditional method is to use wet chemical hydrofluoric acid to remove SiO from the wafer surface before depositing the thin film. 2 , and then enter the PECVD system for subsequent film deposition, but contamination and re-oxidation may occur during the transfer process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The SiO on the wafer surface is etched in this embodiment 2 A method of passivating a wafer at the same time, the method is:

[0017] The temperature of the Si substrate of the etching system is adjusted to 100°C, and deuterium gas with a purity of 99.995% is introduced into the etching system as the etching gas, and the deuterium gas becomes deuterium plasma after passing through the etching system. body with a plasma density of 1.5W / cm 2 The deuterium plasma etched SiO on the wafer surface 2 , passivate the surface of the wafer simultaneously, the flow rate of the deuterium gas in the etching process is 600sccm, and the pressure is 0.02mbar to obtain the etching surface SiO 2 Simultaneously passivated wafers.

Embodiment 2

[0019] The SiO on the wafer surface is etched in this embodiment 2 A method of passivating a wafer at the same time, the method is:

[0020] The temperature of the SiC substrate of the etching system is adjusted to 80°C, and deuterium gas with a purity of 99.99% is introduced into the etching system as the etching gas, and the deuterium gas becomes deuterium plasma after passing through the etching system. , the plasma density is 0.6W / cm 2 The deuterium plasma etched SiO on the wafer surface 2 , passivate the surface of the wafer simultaneously, the flow rate of the deuterium gas in the etching process is 400sccm, and the pressure is 0.04mbar to obtain the etching surface SiO 2 Simultaneously passivated wafers.

Embodiment 3

[0022] The SiO on the wafer surface is etched in this embodiment 2 A method of passivating a wafer at the same time, the method is:

[0023] The temperature of the SiC substrate of the etching system is adjusted to 200°C, and deuterium gas with a purity of 99.999% is introduced into the etching system as the etching gas, and the deuterium gas becomes deuterium plasma after passing through the etching system. , the plasma density is 2.0W / cm 2 The deuterium plasma etched SiO on the wafer surface 2 , passivate the surface of the wafer simultaneously, the flow rate of the deuterium gas in the etching process is 800sccm, and the pressure is 0.01mbar to obtain the etching surface SiO 2 Simultaneously passivated wafers.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for etching SiO2 on the surface of a wafer and passivating the wafer at the same time, which comprises the following steps: adjusting the temperature of a substrate of an etching system to 80-200 DEG C, introducing deuterium gas as etching gas into the etching system, enabling the deuterium gas to become deuterium plasma after passing through the etching system, etching SiO2 on the surface of the wafer by the deuterium plasma, and meanwhile, passivating the surface of the wafer to obtain the wafer of which the etched surface SiO2 is passivated at the same time. According to the method, deuterium gas is used as etching gas, SiO2 on the surface of the wafer is removed, meanwhile, the surface of the wafer can be passivated, and the cleanliness of the initial surface of the wafer is guaranteed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor technology, and in particular relates to a SiO2 etching wafer surface 2 Simultaneous passivation of wafers. Background technique [0002] With the faster and faster upgrading of power electronic systems, my country pays more and more attention to the electronics industry, and the application fields of semiconductor chips will become wider and wider, because they are widely used in important fields such as transportation, military defense, and energy conversion. become an important area of ​​research. The quality of the semiconductor process directly determines the performance of the semiconductor chip. How to optimize and improve the semiconductor process has always been the goal of the unremitting efforts of researchers. [0003] PECVD is the most important part of the semiconductor process. The quality of the film directly determines the performance and reliability of the chip. Generally ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01L21/30655Y02P70/50
Inventor 陈润泽徐海云花莹曦马毅斌彭立培王亚峰吝秀峰孙加其
Owner PERIC SPECIAL GASES CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com