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Focused ion beam-scanning electron microscope three-dimensional structure reconstruction correction method

A technology of focused ion beam and scanning electron microscope, which is applied in the fields of instrumentation, calculation, image data processing, etc., can solve problems such as aliasing of 3D reconstruction results, and achieve the effect of accurate 3D reconstruction

Pending Publication Date: 2022-07-08
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to solve the problem in the prior art that the obtained 3D reconstruction results are out of shape due to interference introduced by lens tilt and drift, so as to realize high-precision 3D reconstruction of the micro-nano-scale structure of functional porous materials

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  • Focused ion beam-scanning electron microscope three-dimensional structure reconstruction correction method
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  • Focused ion beam-scanning electron microscope three-dimensional structure reconstruction correction method

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Embodiment Construction

[0046] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

[0047] As mentioned above, the technology of three-dimensional reconstruction based on focused ion beam-SEM in the prior art is restricted by the actual structure and operating environment of the focused ion beam-SEM. The aliasing phenomenon of the reconstruction result caused by the tilt angle and drift will affect the subsequent quantitati...

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Abstract

The invention relates to the technical field of three-dimensional reconstruction, in particular to a focused ion beam-scanning electron microscope three-dimensional structure reconstruction correction method, which comprises the following steps: processing a material to obtain a material sample with a spherical particle adhesion layer; under a vacuum condition, performing pore filling by using a component containing epoxy resin; after the epoxy resin is completely cured, processing the to-be-detected sample, and exposing the material and the spherical particles along the normal direction of the spherical particle adhesion layer; polishing the junction of the exposed material and the spherical particles, and determining a region of interest; cutting and scanning the region of interest by using a focused ion beam-scanning electron microscope to obtain a two-dimensional image sequence, and performing three-dimensional reconstruction to obtain a three-dimensional digital image; and correcting the three-dimensional digital image based on the size and shape of the spherical particles. According to the invention, the three-dimensional reconstruction result of the focused ion beam-scanning electron microscope on the micro-nano structure of the material can be corrected, and a high-precision three-dimensional reconstruction image can be obtained.

Description

technical field [0001] The invention relates to the technical field of three-dimensional reconstruction, in particular to a three-dimensional structure reconstruction and correction method of a focused ion beam-scanning electron microscope. Background technique [0002] 3D reconstruction based on Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM) is a relatively mature 3D reconstruction technique. This technique can achieve a resolution of up to 3 nm and is very suitable for reconstructing micro- and nano-scale structures in porous materials. . However, when this technique is actually used, in order to make the focused ion beam and the sample surface to be measured perpendicular, the inclination angle of the sample stage should be kept at 54°, which leads to a series of slice formation process, the angle of view of the scanning electron microscope is not completely facing the sample surface. , but there is a certain amount of tilt, and at the same time, the scanning el...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06T17/00
CPCG06T17/00
Inventor 周诗豪严资林仲政
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL