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Resonance excitation method based on double-high-Q-value mode microcavity

A resonant excitation and fundamental mode technology, applied in the direction of phonon exciters, lasers, laser components, etc., can solve the problems of increasing the spontaneous emission rate of quantum dots, limiting applications, affecting the improvement of Purcell coefficients, etc., and reducing the overlap. The effects of difficulty, increased tolerance, and high-efficiency resonance excitation

Pending Publication Date: 2022-07-12
SOUTH WEST INST OF TECHN PHYSICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the quality factor of the microcavity is restricted, which affects the improvement of the Purcell coefficient.
This creates a contradiction, which limits the further improvement of the spontaneous emission rate of quantum dots, and also limits the application of this resonant excitation method in strong coupling systems.

Method used

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  • Resonance excitation method based on double-high-Q-value mode microcavity
  • Resonance excitation method based on double-high-Q-value mode microcavity
  • Resonance excitation method based on double-high-Q-value mode microcavity

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Embodiment 1

[0040] This embodiment is applied to an InGaAsP / (InP-slot) micro-pillar resonator single-photon source containing InAs / InP quantum dots with an elliptical cross-section. The specific structure is as follows figure 1 shown.

[0041] The resonance excitation method can be applied to the single-photon source of InGaAsP / (InP-slit) micro-pillar resonator with elliptical cross-section containing InAs / InP quantum dots. The resonator structure in the single-photon source is as follows: figure 1 As shown, a conventional DBR with constant thickness and a DBR with graded thickness composed of an InP substrate, an InP center layer, an InAs / InP quantum dot photon emission source, an InGaAsP layer and an (InP-slit) layer. The long axis length of the InGaAsP layer is D / α (α≤1), the short axis length is Dα; the long axis length of the InP layer is d / β (β≤1), the short axis length is dβ, and the difference between InGaAsP and InP The major and minor axes lie on the same straight line, respect...

Embodiment 2

[0044] This embodiment adopts the micro-pillar resonant cavity structure described in Embodiment 1.

[0045] When e=0.20, D=0.9μm, d=0.222μm, MODE O V and A H The mode wavelengths are all around 1.55μm, the mode distribution example image 3 shown. At this time, the Q factor of the H mode is as high as 1.38×10 5 , Q / √V is about 4.58×10 5 . MODE O M The quality factor is 732.8, and the Q / √V is about 603. The theory shows [Song H, Takemoto K, Miyazawa T, et al.Highquality-factor Si / SiO 2-InP hybrid micropillar cavities with submicrometerdiameter for 1.55-μm telecommunication band[J].Optics Express,2015,23(12):16264 -16272], Q / √V>10 4 enough to strongly couple quantum dots to microcavity modes. Therefore, it has a high Q factor (Q ~ 10 5 , V3 ) of A H The mode enables highly efficient coherent control in the 1.55 μm band. At the same time, the huge difference in quality factor of the two modes makes mode O V It is possible to provide energy to the quantum dots withou...

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Abstract

The invention relates to a resonance excitation method based on a double-high-Q-value mode microcavity, and belongs to the technical field of optoelectronic devices. According to the resonance excitation method, the quality factor of the polarization mode for providing the window for the resonance excitation light is reduced, the spectral line width of the resonance excitation light is widened, the difficulty of overlapping is reduced, and the latitude of resonant cavity manufacturing is improved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, and in particular relates to a resonance excitation method based on a double high-Q mode microcavity. Background technique [0002] For many years, the ideal single photon source has been pursued by people. Due to its unique physical properties, quantum dot systems can well satisfy the requirement that only one photon is excited at a time. However, since quantum dots are not an ideal two-level system, it is difficult to guarantee the isotropy of photons. As a means of generating excitons, resonance excitation can avoid unnecessary relaxation time and ensure the isotropy of lasing photons. However, this also brings certain problems. Since the pump light during resonance excitation has the same wavelength as the single photon emitted by the lasing, how to effectively filter the excitation light has become a problem that needs to be solved. By far the most efficient method is polar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/10
CPCH01S3/10061
Inventor 黄帅谢修敏徐强黄海华蒋若梅谭杨庞树帅刘期斌宋海智
Owner SOUTH WEST INST OF TECHN PHYSICS