Method for cutting silicon rod through double wires and single wire, cutting equipment and cutting system

Abstract

The embodiment of the invention provides a silicon rod double-wire single-wire cutting method, cutting equipment and a cutting system.The silicon rod double-wire single-wire cutting method comprises the steps that a silicon rod is cut once through two parallel cutting wires in the length direction of the silicon rod, the two cutting wires are located on the two sides of the center line of the silicon rod correspondingly, and two parallel first side faces are formed after cutting; cutting the silicon rod on which the first side surface is formed for three times, wherein the silicon rod is cut through one cutting line each time; wherein the cutting surfaces formed by two times of cutting are vertically intersected with the first side surface and are respectively positioned on two sides of the central line of the silicon rod, the cutting surface formed by the other time of cutting is parallel or vertical to the first side surface, and the distance between the cutting surface and the central line of the silicon rod is smaller than the distance between the other cutting surfaces and the central line of the silicon rod; and two small silicon rods with rectangular cross sections are obtained. The silicon rod double-wire single-wire cutting method provided by the embodiment of the invention can meet the cutting requirements of small-size silicon wafers, and the cutting quality and efficiency can be improved.

Description

technical field [0001] The present application relates to hard material cutting technology, and in particular, to a method, cutting equipment and cutting system for cutting silicon rods with two wires and one wire. Background technique [0002] With the development of heterojunction cells, the demand for small silicon wafers is increasing, and the demand for thin wafers is also relatively large. The thickness of silicon wafers has increased from 180 microns to 150 microns. In the future, the market may even require silicon wafers with a thickness of 100 microns. The thinner the silicon wafer, the more difficult it is to cut, and the more difficult it is to guarantee the cutting quality. [0003] In the traditional scheme, the cylindrical monocrystalline silicon rod is usually cut into square rods, and then the square rod is cut into large silicon wafers, and then the large silicon wafers are diced and cut to form small silicon wafers using laser technology. The dicing proce...

AI Technical Summary

Problems solved by technology

The thickness of silicon wafers ranges from 180 microns to 150 microns, and the future market may even require 100 microns of silicon wafers. The thinner the silicon wafers, the more difficult it is to cut, and the less likely it is to guarantee the cutting quality.

[0003] In the traditional scheme, the cylindrical single crystal silicon rod is usually first cut into square rods, and then the square rods are cut into large silicon wafers, and then the large silicon wafers are diced and cut into small silicon wafers by laser technology. The scribing process will cause damage and defect states on the cross-section of the small silicon wafer, which will seriously affect the conversion efficiency of the final processed heterojunction cell

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