Diffusion impervious layer modification for flexible substrate

A flexible substrate and barrier layer technology, applied in coatings, climate sustainability, metal material coating technology, etc., can solve problems such as cracking and lower battery yield

Inactive Publication Date: 2013-09-11
任丘市永基光电太阳能有限公司
View PDF1 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the stress matching problem between the oxide and the metal substrate, cracking

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Diffusion impervious layer modification for flexible substrate

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0018] The present invention will be further explained in detail with the following examples.

[0019] The stainless steel with a thickness of 25μm is selected as the flexible substrate, and the ultrasonic cleaning method is adopted. The solvent and sequence are: stainless steel cleaning agent (15min)→deionized water (15min)→nitrogen drying.

[0020] The cleaned stainless steel substrate is placed in a horizontal opposing magnetron sputtering target equipment, using a chromium target with a purity of 99.5% or more, the sputtering gas is argon with a purity of 99.999%, the working pressure is 2.0Pa, and the background vacuum 3.0×10 -3 Pa, the substrate temperature is 200℃, and the distance between the target and the substrate is 100mm. During sputtering, argon gas is pre-sputtered to clean the target surface, and the sputtering starts after the glow is stable. Sputtering ends for 5-20 min.

[0021] Using this method to sputter a 1-2μm thick chromium barrier layer on a flexible stain...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a modification method of adding an impervious layer to a flexible substrate in a flexible CIGS (Copper Indium Gallium Selenide) thin-film solar cell. Stainless steel is the preferred material for the flexible CIGS thin-film solar cell; however, diffusion of elements such as Fe and Cu in the substrate can cause reduction of the quality of the cell. Therefore, the seeking of an appropriate diffusion impervious layer material and a low-cost preparation process thereof is meaningful for improving device efficiency and reducing production cost. A 1-2 micron chromium diffusion impervious layer is deposited on a stainless steel substrate through a direct-current magnetron sputtering process; as a result, the crystallization quality of a back electrode layer and a CIGS absorption layer thin film both grown on the substrate can be obviously improved.

Description

technical field [0001] The invention relates to the modification of a flexible substrate in a flexible CIGS thin film solar cell, mainly a preparation method for adding a barrier layer to the flexible substrate. Background technique [0002] Stainless steel foil can adapt to the high-temperature preparation environment required for high-efficiency devices, and its price is much lower than titanium foil and molybdenum foil. It is the preferred material for flexible CIGS thin film solar cell substrates. However, the diffusion of some elements in the stainless steel substrate, such as Fe and Cu, will reduce the quality of the battery. Therefore, it is of great significance to find a suitable diffusion barrier material and its low-cost preparation process for improving device efficiency and reducing production cost. [0003] Copper indium gallium selenide (CIGS for short) thin-film solar cells with flexible substrates have broad application prospects in space applications, buil...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/35C23C14/16H01L31/18
CPCY02P70/50
Inventor 孙玉娣张建柱彭博马格林
Owner 任丘市永基光电太阳能有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap