Vertical scanning white light interference spectrum assisted Mueller matrix ellipsometry system and method

Abstract

The invention discloses a vertical scanning white light interference spectrum assisted Mueller matrix ellipsometry system and method, and a vertical scanning white light interference module can assist a Mueller matrix ellipsometer in high-precision leveling and can also realize nanoscale measurement of substrate surface roughness. The Mueller matrix ellipsometry module realizes high-precision and rapid measurement of optical characteristics of the substrate; the data processing module comprises a surface topography parameter extraction unit and an optical characteristic parameter extraction unit; the surface topography parameter extraction unit comprises a single-frame image and a tomographic image which are acquired by the vertical scanning white light interference module; high-precision leveling is carried out on a sample table based on a single-frame image so as to ensure the precision of ellipsometry measurement data, recovery and parameter extraction are carried out on the surface topography based on a tomographic image, an initial value of a rough layer in an ellipsometry optical model of a corresponding measurement point is provided, and a basis is provided for ellipsometry parameter decoupling.

Description

technical field [0001] The invention relates to the technical field of measurement, in particular to a high-precision measurement system and method of vertical scanning white light interference spectrum assisted Mueller matrix ellipsometry. Background technique [0002] In the era of 5G, AI, and big data, and driven by consumer demand and technological progress, more application trends are driving the further development of the semiconductor industry. With the development of semiconductor technology, the third-generation semiconductor materials represented by SiC, GaN, and diamond have more excellent optical, mechanical, electrical, and thermal characteristics than the first and second-generation semiconductors. A key material for the next generation of semiconductor devices. Because of its wide band gap, high breakdown field strength, high thermal conductivity, high electron saturation drift speed, strong radiation resistance and good chemical stability, it is very suitabl...

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Problems solved by technology

However, it did not discuss the influence of the roughness layer when establishing the optical model and fitting the parameters.

Or in the fitting analysis, use the AFM test results to fix the roughness layer, but it is difficult to ensure that when switching between different instruments for measurement, the two measurement areas are the same, and the analysis results are not consistent, which will inevitably introduce large error

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