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Polishing pad, preparation method of polishing pad and manufacturing method of semiconductor device

A polishing pad and semiconductor technology, applied in the field of polishing pads, can solve the problems of increasing dish-shaped depressions on the surface of semiconductor wafers, and achieve the effects of reducing the Spk reduction rate, increasing the area, and preventing defects

Active Publication Date: 2022-07-19
SK恩普士有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, although CMP polishing using a soft pad can improve defects in the polished substrate, such a soft pad may increase dishing on the metallized semiconductor wafer surface due to the soft nature of the pad

Method used

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  • Polishing pad, preparation method of polishing pad and manufacturing method of semiconductor device
  • Polishing pad, preparation method of polishing pad and manufacturing method of semiconductor device
  • Polishing pad, preparation method of polishing pad and manufacturing method of semiconductor device

Examples

Experimental program
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Effect test

preparation example Construction

[0087] In the existing preparation of the polishing layer in the polishing pad, pores with irregular size and arrangement are formed by physical or chemical methods. According to the existing preparation method of the polishing layer, pores with various shapes and sizes are arranged in an irregularly dispersed form on the surface and inside of the polishing layer of the polymer material.

[0088] In the existing method of forming pores or pores in the polishing layer, the physical method is to mix minute substances in the forming substances of the polishing layer. In this case, the porous micro-substance should be thoroughly mixed with the polymer in the initial stage of preparation of the polishing layer.

[0089] However, in the physical method, it is difficult to sufficiently and uniformly mix the fine substances with the polymer in the initial stage, and the sizes of the fine substances also vary.

[0090] Generally, the average diameter of pores formed by physical method...

Embodiment 1

[0196] Preparation of polishing pads

[0197] By combining TDI, H 12 MDI, polytetramethylene ether glycol (Polytetramethylene ether glycol) and diethylene glycol (Diethylene glycol) were put into a four-necked flask and reacted at 80 °C for 3 hours to prepare prepolymers with an NCO% of 8 to 12%. thing.

[0198] To prepare the Top Pad, the prepolymer tank was filled with the prepared polymers and catalysts.

[0199] At this time, 0.002 parts by weight of a catalyst (which is triethylamine) was charged based on 100 parts by weight of the prepolymer. The curing agent tank (Tank) was filled with bis(4-amino-3-chlorophenyl)methane (bis(4-amino-3-chlorophenyl)methane, Ishihara Corporation). The unexpanded solid blowing agent (Akzonobel Corporation, 551DU40) was mixed with the prepolymer prior to filling into the prepolymer tank.

[0200] During casting, the equivalent of prepolymer and curing agent was adjusted to 1:1, spit out at a speed of 10kg / min, and injected with inert g...

Embodiment 2

[0203] By combining TDI, H 12 MDI, polytetramethylene ether glycol, and diethylene glycol were put into a four-necked flask, and then reacted at 80° C. for 3 hours to prepare a prepolymer having an NCO% of 8 to 12%.

[0204] To prepare the top mat, the prepolymer tank was filled with the prepared prepolymer and catalyst in a casting apparatus provided with prepolymer, curing agent, inert gas injection lines and liquid blowing agent injection lines.

[0205] At this time, 0.001 part by weight of a catalyst (which is triethylamine) was charged based on 100 parts by weight of the prepolymer. The curing agent tank was filled with bis(4-amino-3-chlorophenyl)methane (Ishihara Corporation). Unexpanded solid blowing agent (Akzonobel Corporation, 551DU40) was mixed with the prepolymer prior to filling into the prepolymer tank.

[0206] During casting, the equivalent of the prepolymer and the curing agent is adjusted to 1:1, spit out at a speed of 10kg / min, inject inert gas nitrogen a...

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Abstract

The present invention relates to a polishing pad, a method for manufacturing the polishing pad, and a method for manufacturing a semiconductor device, the polishing pad forming a plurality of uniform air holes in a polishing layer and adjusting surface roughness characteristics of a polishing surface of the polishing layer, thereby being capable of improving an area of direct contact with a semiconductor substrate when a polishing process is performed, and improving the surface roughness characteristics of the polishing surface of the polishing layer. Defects on the surface of a semiconductor substrate are prevented. In addition, the invention provides a manufacturing method of a semiconductor device using the polishing pad.

Description

technical field [0001] The present invention relates to a polishing pad used in a chemical mechanical planarization (Chemical Mechanical Planarization, CMP) process, a method for preparing the polishing pad, and a method for manufacturing a semiconductor device using the polishing pad. Background technique [0002] Among the semiconductor manufacturing processes, a chemical mechanical planarization (CMP) process is as follows: in a state where a wafer is attached to a head and brought into contact with the surface of a polishing pad formed on a platen, a slurry is supplied The material is used to chemically react the wafer surface, and at the same time, the concave and convex portions of the wafer surface are mechanically planarized by making the platen and the head move relative to each other. [0003] "Dishing" means that in CMP polishing, the metal layer should remain parallel or coplanar with the underlying layers of the substrate wafer after CMP polishing, but cause met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04B24B37/10B24B37/24B24B37/26B24B37/34C08G18/66C08G18/48C08G18/32C08G18/12C08G18/38C08G101/00
CPCB24B37/24B24B37/26B24B37/042B24B37/10B24B37/34C08G18/6674C08G18/4854C08G18/12C08G2101/00C08G18/3814B24B37/22B29C44/445B29C44/3415B29C44/3457B29K2105/045B29K2075/00C08G18/3206C08G18/724C08G18/7621C08G18/758C08G18/18C08G2110/0066C08J9/32C08J2203/22C08J2205/044C08J2375/08H01L21/67092C08J9/236B29C44/3461B29C44/36C08G18/10C08J2201/022C08G18/14
Inventor 尹钟旭许惠暎郑恩先安宰仁
Owner SK恩普士有限公司
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