Wafer drying method, wafer drying device and chemical mechanical grinding machine

Abstract

The invention discloses a wafer drying method, a wafer drying device, a chemical mechanical grinding machine and semiconductor equipment. The method comprises the following steps: providing a cleaned wafer; immersing the wafer in a drying liquid to separate liquid remaining on the surface of the wafer; moving the wafer out of the drying liquid, and spraying gas to the surface of the wafer to dry the wafer; wherein the drying liquid is insoluble or slightly soluble in water; the surface tension of the drying liquid is lower than 30 milliNewton / meter. According to the method, the drying liquid which has the characteristics of low surface tension, low boiling point and immiscibility with water is selected, and the cleaning liquid drops attached to the surface of the wafer can be completely replaced by utilizing the surface tension difference. According to the method, the problem of difficulty in dehydration of micropores and deep channels can be effectively solved; through combination of pulling and nitrogen blow-drying processes, the purpose of rapid desorption and volatilization of the drying liquid on the surface of the wafer can be achieved, and the dried wafer is obtained.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a wafer drying method, a wafer drying device and a chemical mechanical polishing machine. Background technique [0002] Driven by technologies such as the Internet of Things and intelligence, the functions and applications of electronic devices have been greatly expanded. The application of such high-end chips requires the thickness and surface properties of the devices to be ultra-smooth, non-destructive, and thin. Therefore, with the rapid development of the IC industry, various surface planarization technologies have been successively developed. Among them, chemical mechanical polishing (Chemical Mechanical Polish, CMP), as the only technology that can provide global planarization, is widely used in the field of semiconductor manufacturing. CMP combines chemical etching and mechanical friction to smooth the raised portions of the wafer surface and process ...

AI Technical Summary

Problems solved by technology

Although this method does not have the risk of liquid dripping back onto the wafer, the wafer surface is prone to water mark defects, and this method is critical for pull speed, IPA / N 2 Process control requirements such as flow and discharge are high

In addition, since IPA is soluble in water, the deionized water in the drying tank needs to be replaced after each wafer is dried, resulting in a great waste of water resources

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