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Flow guide device for polycrystalline ingot furnace and use method of flow guide device

A technology of diversion devices and ingot furnaces, which is applied to the growth of polycrystalline materials, chemical instruments and methods, and single crystal growth. Avoid the effect of too low temperature

Pending Publication Date: 2022-07-29
扬州晶樱光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a flow guiding device for a polycrystalline ingot furnace and its use method to solve the problem that the current guiding device on the polycrystalline silicon ingot cannot be rotated in the above-mentioned background technology

Method used

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  • Flow guide device for polycrystalline ingot furnace and use method of flow guide device
  • Flow guide device for polycrystalline ingot furnace and use method of flow guide device
  • Flow guide device for polycrystalline ingot furnace and use method of flow guide device

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Embodiment

[0030] see Figure 1-7 , the present invention provides a technical solution: a diversion device for a polycrystalline ingot furnace, comprising a hollow load-bearing rod 1, the lower side of the outer end of the hollow load-bearing rod 1 is movably provided with a cavity turntable 2, the cavity turntable 2 is connected with the hollow load-bearing rod 1 through a bearing. The upper side of the bearing is provided with a sealing element to prevent the leakage of inert gas. The outer end of the hollow load-bearing rod 1 is sleeved with a sun gear 9 on the lower side, and the sun gear 9 is fixed on the hollow load-bearing rod. The outer end of the rod 1 cannot be rotated. The inner cavity of the cavity turntable 2 is movably installed with a planetary gear 10. The planetary gear 10 meshes with the sun gear 9. The planetary gear 10 will rotate around the sun gear 9 at the same time. The outer side of the cavity turntable 2 is connected with an air distribution plate 3, the number...

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Abstract

The invention belongs to the technical field of polycrystal ingot furnaces, and particularly relates to a flow guiding device for a polycrystal ingot furnace and a using method of the flow guiding device. A cavity rotating disc is movably arranged on the lower side of the outer end of a hollow bearing rod in a sleeving mode, a sun gear is arranged on the lower side of the outer end of the hollow bearing rod in a sleeving mode, and a planetary gear is movably installed in an inner cavity of the cavity rotating disc; the planetary gear is meshed with the sun gear, the outer side of the cavity rotating disc is connected with an air distribution plate, a steering wheel is movably installed on a body of the air distribution plate, a transmission rod is hinged between the steering wheel and the planetary gear, a movable spray head is installed on the side, extending out of the air distribution plate, of the steering wheel, and an air guide hole is formed in a body of the steering wheel. According to the device, the introduced inert gas drives the gas distribution plate and the cavity turntable to rotate, the gas distribution plate can drive the fixed spray head and the movable spray head to rotate, and the fixed spray head and the movable spray head blow air during rotation, so that the temperature of liquid silicon at a single point can be prevented from being too low.

Description

technical field [0001] The invention relates to the technical field of polycrystalline ingot casting furnaces, in particular to a flow guiding device for polycrystalline ingot casting furnaces and a method for using the same. Background technique [0002] The polycrystalline silicon ingot furnace is mainly used for the large-scale production of solar-grade polycrystalline silicon ingots. Since the polycrystalline silicon ingot is in the ingot casting process, the content of the magazine will not only affect the electrical properties of the polycrystalline silicon ingot, but also affect the conversion efficiency of the solar cell; in addition, when the carbon content of the polycrystalline silicon ingot is too high, it will also lead to the mechanical properties of the silicon wafer. Insufficient performance. The liquid silicon is cooled by introducing an inert gas through the diversion device. When the liquid silicon is cooled, the impurities such as carbon and nitrogen in ...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 张力峰朱庆龙杨定勇邹文龙
Owner 扬州晶樱光电科技有限公司