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Wide bandgap semiconductor ultraviolet detector imaging system and method based on galvanometer scanning

A wide-bandgap semiconductor and ultraviolet detector technology, used in instruments, image enhancement, image data processing, etc., can solve the problems of low image signal-to-noise ratio and low detection accuracy, restore clear images and reduce overlapping. Effect

Pending Publication Date: 2022-07-29
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The signal-to-noise ratio of the image detected by this scheme is low, and the detection accuracy is not high

Method used

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  • Wide bandgap semiconductor ultraviolet detector imaging system and method based on galvanometer scanning
  • Wide bandgap semiconductor ultraviolet detector imaging system and method based on galvanometer scanning
  • Wide bandgap semiconductor ultraviolet detector imaging system and method based on galvanometer scanning

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Embodiment 1

[0056] This embodiment provides an imaging system based on a wide-bandgap semiconductor ultraviolet detector, such as figure 1 As shown, it includes a wide bandgap semiconductor ultraviolet detector 1, a two-dimensional galvanometer module 2, a triggering device 21, a target area 3 and a scanning pixel limiting module 4, wherein:

[0057] The target area 3 emits solar-blind ultraviolet rays, which are received by the wide-bandgap semiconductor ultraviolet detector 1 after passing through the two-dimensional galvanometer module 2;

[0058] The triggering device 21 is connected with the two-dimensional galvanometer module 2, and the triggering device 21 controls the working state of the two-dimensional galvanometer module 2, so that at a certain moment, only one determination is made in the target area 3. The light emitted from the small area of ​​​​is only received by the wide-bandgap semiconductor ultraviolet detector 1 after passing through the two-dimensional galvanometer mo...

Embodiment 2

[0062] On the basis of Embodiment 1, this embodiment continues to disclose the following content:

[0063] The response band of the material used in the wide-bandgap semiconductor ultraviolet detector 1 is in the solar blind region, and an AlGaN-based solar blind ultraviolet detector is used in this embodiment.

[0064] like figure 2 As shown in the figure, the two-dimensional galvanometer module 2 includes a galvanometer X and a galvanometer Y whose scanning directions are orthogonal, and reflects light beams in different small areas within the field of view at different times through vibration. At a certain moment, the target area 3 The light emitted by a certain small area in the interior is successively received by the wide-bandgap semiconductor ultraviolet detector 1 through the reflection of the galvanometer Y and the galvanometer X, and the trigger device 21 inputs an electrical signal to the two-dimensional galvanometer module 2 to drive The galvanometer X and the ga...

Embodiment 3

[0069] This embodiment provides a wide-bandgap semiconductor ultraviolet detector imaging method based on galvanometer scanning, such as Figure 4 As shown, the method is applied to the wide-bandgap semiconductor ultraviolet detector imaging system based on galvanometer scanning according to any one of claims 1 to 5, and the method includes the following steps:

[0070] S1: the triggering device 21 inputs a control signal to drive the two-dimensional galvanometer module 2 to scan;

[0071] S2: the solar-blind ultraviolet light signal of the target area 3 is acquired by the wide-bandgap semiconductor ultraviolet detector 1 through the two-dimensional galvanometer module 2 and the scanning pixel limiting module 4;

[0072] S3: The image waveform of the target area 3 is obtained by photoelectric conversion from the wide-bandgap semiconductor ultraviolet detector 1, and is restored to the original image;

[0073] S4: Deconvolution operation is performed on the original image to o...

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Abstract

The invention discloses a wide bandgap semiconductor ultraviolet detector imaging system and method based on galvanometer scanning, and the system comprises a wide bandgap semiconductor ultraviolet detector, a two-dimensional galvanometer module, a triggering device of the two-dimensional galvanometer module, and a scanning pixel control module. The wide bandgap semiconductor ultraviolet detector obtains an optical signal of a target area; the two-dimensional galvanometer module comprises two galvanometers with orthogonal scanning directions, and scans a target area through vibration; the trigger device drives the two-dimensional galvanometer module; the scanning pixel limiting module limits the shape and size of the light beam received by the detector; light emitted by the target area is received by the wide bandgap semiconductor ultraviolet detector through the two-dimensional galvanometer module and the scanning pixel limiting module. The method comprises the steps of image pixel limitation, galvanometer scanning control and deconvolution imaging recovery. Compared with a traditional detection method, the method can achieve the high-sensitivity imaging of a solar blind area through a single-point wide bandgap semiconductor ultraviolet detector, improves the detection precision, and determines the position of a detection target.

Description

technical field [0001] The invention relates to the field of solar-blind ultraviolet imaging detection, and more particularly, to a wide-bandgap semiconductor ultraviolet detector imaging system and method based on galvanometer scanning. Background technique [0002] Compared with traditional visible light and infrared detection, solar-blind UV detection has the characteristics of less background interference, small size and high sensitivity. Due to the absorption of the ozone layer, there is almost no solar-blind ultraviolet rays from the sun at 200nm to 280nm on the earth's surface. Using this band to detect targets can effectively avoid the interference of sunlight on detection, which is beneficial to the detection of targets. Therefore, the imaging solar-blind UV detector can more accurately confirm the target, and has a wide range of application requirements in fire scenes, corona discharge, missile warning and other scenarios. However, the current common silicon-based...

Claims

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Application Information

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IPC IPC(8): G01J3/28G01J3/12G06T5/00
CPCG01J3/2823G01J3/12G06T5/73
Inventor 王嘉辉陈华宽仲谋陈泽鹏方泓锦江灏蔡志岗
Owner SUN YAT SEN UNIV
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