Semiconductor annealing method, annealing device and annealing system

Abstract

The invention relates to the technical field of semiconductor device preparation, and particularly discloses a semiconductor annealing method, an annealing device and an annealing system.The method comprises the following steps that surface temperature information of a SiC semiconductor sheet is obtained; performing microwave heating on the SiC semiconductor sheet at a heating temperature lower than the melting point temperature of the monocrystalline silicon; when the surface temperature information reaches a preset first temperature threshold value, movable electron beam heating is conducted on the SiC semiconductor sheet till annealing treatment of the SiC semiconductor sheet is completed; according to the method, the SiC semiconductor sheet is heated to the first temperature threshold value through microwave heating treatment, the temperature needed by annealing treatment of the SiC semiconductor sheet can be reduced to be within the expected range, then accurate temperature control annealing treatment is conducted on the SiC semiconductor sheet through electron beam heating, and the temperature of the SiC semiconductor sheet can be reduced under the condition that the annealing treatment effect is guaranteed. The annealing treatment temperature is reduced, and the annealing treatment efficiency is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor device preparation, and in particular, to a semiconductor annealing method, an annealing apparatus, and an annealing system. Background technique [0002] In the prior art, after the semiconductor sheet is prepared, it needs to be annealed, but its annealing temperature is relatively high, which is easy to cause damage to its surface elements or protective layer. In other words, the rapid annealing temperature is generally above 1600 °C, the melting point of Si is 1400 °C, and the melting point of SiC is 1700 °C. Although the annealing process can activate the ions, it may lead to the volatilization of the Si element on the surface of the material and cause damage to the original SiC wafer. At present, the main method to avoid it is to coat the surface of the SiC semiconductor sheet with a protective layer. However, above 1600°C, the material of the protective layer is not stable ...

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Problems solved by technology

[0004] The purpose of this application is to provide a semiconductor annealing method, annealing device and annealing system, which can reduce the annealing temperature and improve the annealing efficiency while ensuring the annealing effect, and solve the problem of the surface elements or protection of SiC semiconductor sheets. layer damage

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