Spin-orbit torque driven gradient synthesis antiferromagnetic and memory application of spin-orbit torque driven gradient synthesis antiferromagnetic

A technology for synthesizing antiferromagnetism and spin-orbit, which is applied in the fields of magnetic field-controlled resistors, material selection, Hall effect devices, etc., can solve the problems of poor thermal stability and high flipping power consumption, and achieve good thermal stability, The effect of high storage density and fast speed

Active Publication Date: 2022-07-29
BEIHANG UNIV
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Problems solved by technology

[0006] In order to solve the problems of poor thermal stability of MTJ devices and high flipping power consumption in the prior art, the purpose of the present invention is to provide a spin-orbit moment drive Gradient synthetic antiferromagnetism and its memory application, to solve the problems in the above-mentioned prior art

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  • Spin-orbit torque driven gradient synthesis antiferromagnetic and memory application of spin-orbit torque driven gradient synthesis antiferromagnetic
  • Spin-orbit torque driven gradient synthesis antiferromagnetic and memory application of spin-orbit torque driven gradient synthesis antiferromagnetic

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Embodiment Construction

[0024] It should be noted that the embodiments in the present application and the features of the embodiments may be combined with each other in the case of no conflict. The present application will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

[0025] like figure 1 As shown in (a), this embodiment provides a spin-orbit moment-driven gradient synthesis antiferromagnet, which specifically includes: a substrate 11 , a first gradient layer 12 , an antiferromagnetic coupling layer 13 , and a second gradient layer 14 ; wherein the antiferromagnetic coupling layer 13 is located between the first gradient layer 12 and the second gradient layer 14; the first gradient layer 12 and the second gradient layer 14 are antiferromagnetically coupled through the antiferromagnetic coupling layer 13; the first gradient Layer 12 is gradient opposite to second gradient layer 14 .

[0026] In addition, the scheme can also be sim...

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Abstract

The invention discloses a spin orbit moment driven gradient synthesis antiferromagnetic and a memory application thereof. The gradient synthesis antiferromagnetic comprises a substrate, a first gradient layer, an antiferromagnetic coupling layer and a second gradient layer, the antiferromagnetic coupling layer is located between the first gradient layer and the second gradient layer; antiferromagnetic coupling is carried out on the first gradient layer and the second gradient layer through the antiferromagnetic coupling layer; and the gradient of the first gradient layer is opposite to that of the second gradient layer. The thermal stability of the gradient synthesis antiferromagnetic driven by the spin-orbit moment is greatly improved, the flip current density is remarkably reduced compared with that of a traditional magnetic tunnel junction, and information storage with ultra-high density and ultra-low power consumption can be achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a spin-orbit moment-driven gradient synthesis antiferromagnetism and its memory application. Background technique [0002] Memory is an important part of computer architecture and has a decisive impact on the speed, integration and power consumption of the computer. However, traditional complementary metal-oxide-semiconductor (CMOS)-based memories have encountered performance bottlenecks as the size of transistors has approached physical limits. Spin-orbit torque (SOT)-based magnetic random access memory (SOT-MRAM) is expected to become the next-generation low-power general-purpose memory due to its advantages of non-volatility, infinite erasability, and fast writing. [0003] The core structure of magnetic random access memory (MRAM) is a magnetic tunnel junction (MTJ), which consists of a spin-orbit coupled material (such as Ta, W, Pt) and two ferromag...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/08H01L43/10H01L43/14
CPCH10N52/01H10N52/101H10N50/85H10N50/10
Inventor 张昆陈磊李博张悦赵巍胜
Owner BEIHANG UNIV
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