Spin-orbit torque driven gradient synthesis antiferromagnetic and memory application of spin-orbit torque driven gradient synthesis antiferromagnetic

Abstract

The invention discloses a spin orbit moment driven gradient synthesis antiferromagnetic and a memory application thereof. The gradient synthesis antiferromagnetic comprises a substrate, a first gradient layer, an antiferromagnetic coupling layer and a second gradient layer, the antiferromagnetic coupling layer is located between the first gradient layer and the second gradient layer; antiferromagnetic coupling is carried out on the first gradient layer and the second gradient layer through the antiferromagnetic coupling layer; and the gradient of the first gradient layer is opposite to that of the second gradient layer. The thermal stability of the gradient synthesis antiferromagnetic driven by the spin-orbit moment is greatly improved, the flip current density is remarkably reduced compared with that of a traditional magnetic tunnel junction, and information storage with ultra-high density and ultra-low power consumption can be achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a spin-orbit moment-driven gradient synthesis antiferromagnetism and its memory application. Background technique [0002] Memory is an important part of computer architecture and has a decisive impact on the speed, integration and power consumption of the computer. However, traditional complementary metal-oxide-semiconductor (CMOS)-based memories have encountered performance bottlenecks as the size of transistors has approached physical limits. Spin-orbit torque (SOT)-based magnetic random access memory (SOT-MRAM) is expected to become the next-generation low-power general-purpose memory due to its advantages of non-volatility, infinite erasability, and fast writing. [0003] The core structure of magnetic random access memory (MRAM) is a magnetic tunnel junction (MTJ), which consists of a spin-orbit coupled material (such as Ta, W, Pt) and two ferromag...

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Problems solved by technology

[0006] In order to solve the problems of poor thermal stability of MTJ devices and high flipping power consumption in the prior art, the purpose of the present invention is to provide a spin-orbit moment drive Gradient synthetic antiferromagnetism and its memory application, to solve the problems in the above-mentioned prior art

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