Memristor based on ferroelectric top gate and preparation method and regulation and control method thereof

Abstract

The invention discloses a ferroelectric top gate-based memristor and a preparation method and a regulation and control method thereof. The memristor comprises a substrate, a first electrode, a second electrode, a resistive layer, a ferroelectric layer and a top gate, wherein the first electrode and the second electrode are arranged on the substrate at an interval; the resistive layer is arranged between the first electrode and the second electrode; the ferroelectric layer is arranged on the resistive layer; according to the invention, the memory effect of the memristor is regulated and controlled by using the ferroelectric effect, so that bidirectional and nonvolatile regulation and control of the memristive behavior can be realized; the ferroelectric effect also can optimize the storage performance of the device in the regulation and control process, such as reduction of the operating voltage of the device, multi-bit storage and quick write / erase operation. Due to the introduction of the ferroelectric layer, the device can complete programming in two modes: 1, the ferroelectric layer is in a non-polarized overturning state, and resistance switching is completed under the action of an independent electric field; and secondly, the ferroelectric layer is in a polarization overturning state, and resistance switching is completed under the combined action of a ferroelectric field and an electric field.

Description

technical field [0001] The invention relates to the technical field of memristors, in particular to a memristor based on a ferroelectric top gate and a preparation method and control method thereof. Background technique [0002] Memristor is a new type of non-volatile memory device, which has received extensive attention in the semiconductor field in recent years, and has shown excellent application prospects in the fields of information storage and emerging brain-like computing. The structure of the memristor is extremely simple, using a sandwich structure, that is, "metal-resistive switching layer-metal". Electrical excitation can cause the formation and breakage of conductive paths in the resistive switching layer, so that the device switches between two or more conductance states to complete data storage. In the context of big data and artificial intelligence, the development of memristors with high functional density has attracted extensive attention of researchers. ...

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Problems solved by technology

[0006] In view of the above deficiencies in the prior art, the object of the present invention is to provide a memristor based on a ferroelectric top gate and its preparation method and regulation method, aiming at solving the problem that the regulation of the memristor behavior by the existing memristor is volatile. type, and cannot be bidirectional

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