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High anti-interference circuit for GaN power tube half-bridge driving

A drive circuit, half-bridge drive technology, applied in the direction of output power conversion devices, high-efficiency power electronic conversion, electrical components, etc., can solve the problems of increasing breaking loss, reducing switching speed, etc., and achieve a good suppression effect

Pending Publication Date: 2022-08-05
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method is simple and effective, it reduces the switching speed and increases the breaking loss

Method used

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  • High anti-interference circuit for GaN power tube half-bridge driving
  • High anti-interference circuit for GaN power tube half-bridge driving
  • High anti-interference circuit for GaN power tube half-bridge driving

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Embodiment Construction

[0023] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0024] figure 1 This is a circuit according to an embodiment of the present invention. A high-side crosstalk suppression auxiliary circuit 001_H is set in the high-side high-interference immunity circuit, including resistor R1_H, resistor R2_H, diode D1_H, diode D2_H, capacitor C1_H, NPN transistor T2_H and PNP transistor T1_H, among which, resistor R1_H, PNP transistor T1_H, Capacitor C1_H and diode D2_H constitute a forward crosstalk voltage peak absorption circuit 002_H; diode D1_H, NPN transistor T2_H, resistor R2_H and capacitor C1_H (shared) constitute a negative crosstalk voltage peak absorption circuit 003_H. The low-side high-interference immunity circuit 001_L has the same structure as the high-side crosstalk suppression auxiliary circuit 001_H, including resistor R1_L, resistor R2_L, diode D1_L, diode D2_L, capacitor C1_L, NPN transis...

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Abstract

The invention discloses a high anti-interference circuit for GaN power tube half-bridge driving, which is characterized in that a high-side high anti-interference circuit and a low-side high anti-interference circuit are respectively arranged between a high-side driving circuit and a low-side driving circuit and between a high-side GaN power tube and a low-side GaN power tube; a crosstalk suppression auxiliary loop composed of a positive crosstalk voltage peak absorption circuit and a negative crosstalk voltage peak absorption circuit is arranged in each of the high-side high-anti-interference circuit and the low-side high-anti-interference circuit, and the positive crosstalk voltage peak absorption circuits and the negative crosstalk voltage peak absorption circuits are matched with each other, so that the positive crosstalk problem and the negative crosstalk problem of the GaN circuit can be well suppressed. And the driving circuit can work reliably.

Description

technical field [0001] The invention relates to a half-bridge driving circuit using GaN (gallium nitride) power transistors, in particular to a high anti-interference circuit for driving a GaN power transistor half-bridge. Background technique [0002] Power semiconductor devices play an important role in the regulation and distribution of energy and electricity in the world. Many types of high-voltage silicon-based devices are widely used in power electronics and power system design. and switching frequency has reached a physical limit. The emergence of the third generation of wide-bandgap semiconductor devices makes it possible to break this physical limit. Among them, GaN devices, as the main representative, have the significant advantages of fast switching speed, low switching loss, and high withstand voltage, thereby increasing the switching frequency of the system. and power density. [0003] However, in the actual bridge circuit, with the continuous increase of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M1/088H02M1/32
CPCH02M1/08H02M1/088H02M1/32Y02B70/10
Inventor 孙伟锋袁清魏涛郑逸飞时龙兴
Owner SOUTHEAST UNIV