Process for producing semiconductor article

Abstract

A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

Description

technical field [0001] The present invention relates to a manufacturing process of semiconductor products, which is stably suitable for manufacturing semiconductor devices such as semiconductor integrated circuits, solar cells, semiconductor lasers or light emitting diodes. In particular, it relates to the manufacturing process of semiconductor products having a step of separating the substrate. Background technique [0002] Semiconductor products generally refer to semiconductor wafers, semiconductor substrates, and various semiconductor devices, and include elements that utilize semiconductor regions to manufacture semiconductor devices and elements that are used to manufacture semiconductor devices. [0003] The type of semiconductor device under consideration includes a semiconductor layer disposed on an insulator. [0004] The technique of forming single crystal silicon on insulator is called silicon-on-insulator (SOI) technique, which is widely known. Various studies...

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Problems solved by technology

However, this process also has disadvantages. If there are particulate foreign objects on the substrate during plasma etching, they act as a large amount of etching mask and form protrusions on the substrate when the etching operation is finished.

[0047] However, the process only works efficiently at temperatures where the crystals rearrange and the gas bubbles coalesce

But creating ion implantation conditions and optimizing heat treatment for the process is not easy

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