Method for manufacturing contacts of semiconductor device using devices having at least one plasma preprocessing cabin

Abstract

A method of manufacturing a contact of a semiconductor device includes a series of pretreatment processes each performed in a plasma pretreatment module. A semiconductor substrate has an interlayer formed on an underlayer of a material containing silicon. A contact hole is formed in the interlayer to expose a surface of the underlayer. Subsequently, the semiconductor substrate is loaded into a plasma pretreatment module. The photoresist pattern is removed by ashing in the plasma pretreatment module. A damaged layer at the surface exposed by the contact hole is then removed in the plasma pretreatment module. Subsequently, the semiconductor substrate is pre-cleaned in the plasma pretreatment module. The semiconductor substrate is then transferred, while in a vacuum, to a deposition module. There, an upper layer is formed on the substrate to fill the contact hole.

Description

technical field [0001] The present invention relates to a method of manufacturing contacts for semiconductor devices using an apparatus having a plasma pretreatment chamber. More particularly, the present invention relates to a pretreatment process from when a photoresist pattern is used to form a contact hole to when a material is deposited in the contact hole. Background technique [0002] Highly integrated semiconductor devices are fabricated by stacking a number of conductive or semiconductor layers one on top of the other, with various insulating layers sandwiched therebetween, and connecting the conductive or semiconductor layers to each other. Typically, contact holes are used to connect conductive or semiconducting layers, and the method of forming such a highly integrated semiconductor device includes the steps of: forming a lower (conducting or semiconducting) layer; forming an insulating layer thereon; forming a contact penetrating the insulating layer The contac...

AI Technical Summary

Problems solved by technology

[0011] First, the photoresist (PR) stripping process requires a lot of processing time, and since the PR stripping process is performed in a wet bath filled with sulfuric acid, the possibility of semiconductor substrate contamination is increased

[0012] Second, the residue processing process performed by dry etching equipment may damage the surface exposed by the contact hole

[0014] Fourth, since the dry etching and deposition processes are usually performed once on one wafer, while the photoresist PR stripping process and the pretreatment cleaning process are characterized by the use of wet baths and are mass production processes, it is difficult to make the process a A whole

Therefore, the semiconductor substrate must be transported through a separate processing device, whereby the substrate is more susceptible to contamination

As a result, many devices will have poor electrical characteristics despite the large amount of processing time spent

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