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Method for mfg. field luminescence display device

A display device and electroluminescence technology, applied in electroluminescence light source, electric light source, identification device, etc., can solve the problems such as inability to perform positioning operation properly, difficulty in positioning the substrate, and abrasion on the film surface of the substrate.

Inactive Publication Date: 2005-05-25
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the substrate is supported in this manner, it is easy to bend at the center of the substrate.
Therefore, when the substrate is moved to the shield side, the central part of the substrate is first in contact with the shield. If the substrate and the shield are relatively moved in the above state for positioning operation, that is, scratches are generated on the substrate film surface, so that the positioning operation cannot be performed properly. conduct
[0011] And from the point of view of positioning accuracy, or from the point of view of deposition accuracy: it is advisable for the above-mentioned substrate and the shield to be in a very close state, so the above-mentioned problem will definitely be a serious problem.
[0012] Not limited to the above-mentioned vacuum deposition operation, if the formation of EL components, or when the correct positioning of the above-mentioned substrate and shield is required, it is also a common problem due to the difficulty in positioning due to the bending of the substrate

Method used

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  • Method for mfg. field luminescence display device
  • Method for mfg. field luminescence display device
  • Method for mfg. field luminescence display device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0052] 1st embodiment

[0053] With regard to the manufacturing method of the EL display device of the present invention, the 1st embodiment of the manufacturing method of the color EL display device of the main state matrix mode is embodied, and will be described later with reference to the accompanying drawings:

[0054] figure 1 It is a plan view of an EL element (in this embodiment, an organic EL element: indicated by EL in the figure) and its peripheral portion of an EL display device to be manufactured in this embodiment. Such as figure 1 As shown, the EL display device is provided with: display dots formed by EL elements, and thin film transistors (TFTs) corresponding to the actuating elements provided for each of the display dots.

[0055] Specifically, as figure 1 As shown, gate signal lines GL and drain signal lines D1 are formed in a matrix as signal lines for driving control of the EL element. Then, EL elements (display dots) are formed corresponding to interse...

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PUM

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Abstract

The present invention provides a method for manufacturing an electroluminescent display device in a manner in which the positioning of the shield and the substrate can be more suitable when the electroluminescence component is formed by the shield. The method of the present invention is to insert the evaporation-coated light-emitting layer of the glass substrate 1 that constitutes the electroluminescence component into a vacuum chamber vertically downward. And a shield 30 is arranged in the vacuum box. The above-mentioned light-emitting layer material is attached to the glass substrate 1 through the opening of the mask 30 to form a light-emitting layer. When positioning the glass substrate 1 and the shield 30 , the upper surface of the glass substrate 1 is supported by an electrostatic adsorption device 60 .

Description

technical field [0001] The present invention relates to a method for manufacturing an electroluminescence (Electro Luminescence: EL) display device, in particular to a method for manufacturing an EL display device in which an EL assembly is formed on a substrate surface by shielding. Background technique [0002] In recent years, display devices using EL elements have attracted attention. [0003] The EL component has: an anode made of a transparent electrode such as ITO, an anode made of MTDATA (4,4-bis(3-methylphenyllamino)biphenyl) or (4,4,4-tris(3-methylphenylphenylamino)triphenyl-anine), etc. A structure in which a hole transport layer, a light-emitting layer made of Bebq2 containing Qunacridone derivatives, etc., an electron transport layer made of Bebq2, and an electrode (cathode) made of manganese.indium alloy, etc., are sequentially stacked. Then, a required voltage is applied between the electrodes of the EL element, so that the holes implanted from the anode and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05B33/10C23C14/04C23C14/12C23C14/50G09F9/00G09F9/30H05B33/12H10K99/00
CPCC23C14/042C23C14/12H10K59/12H10K71/164H05B33/10H10K71/00
Inventor 山田努西川龙司大今进
Owner SANYO ELECTRIC CO LTD
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