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Growing method of Yb:YAG laser crystal

A growth method and laser crystal technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of shortening the Yb fluorescence lifetime, reducing the emission intensity, harmful spectral performance, etc., and achieving the effect of reducing the problem of strong oxidation

Inactive Publication Date: 2005-12-28
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Yb 2+ and the existence of Re-F color centers are harmful to the intrinsic spectral properties of Yb:YAG, not only reducing the Yb at 900-1050nm 3+ Intrinsic absorption and emission intensity at 1028-1060nm, and shortened Yb 3+ Fluorescence lifetime in YAG crystal

Method used

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  • Growing method of Yb:YAG laser crystal
  • Growing method of Yb:YAG laser crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Mix the Yb:YAG raw materials according to the ratio, place them in an iridium crucible, and install them in a furnace. Slowly evacuate to 8×10 -3 MP, filled with pure nitrogen, the temperature starts to rise after the pressure reaches 0.12MP, observe the pressure in the furnace when it reaches 1500°C, and then fill in 1% oxygen according to the pressure in the furnace, then heat up the melt, and grow the seed crystal. The growth conditions are as follows: pulling speed 1-2mm / hr, rotation speed 5-20rpm, after the growth is completed, it is gradually lowered to room temperature and released from the oven.

[0016] The Yb:YAG crystal grown by the above process is compared with the Yb:YAG crystal grown in ordinary nitrogen by medium-frequency induction pulling method to grow Yb:YAG laser crystal. The absorption bands of the former at 370nm and 625nm disappear, the lattice defects are reduced a lot, and the Yb at 900-1050nm 3+ Both the intrinsic absorption and the emission...

Embodiment 2

[0018] Mix the Yb:YAG raw materials according to the ratio, place them in an iridium crucible, and install them in a furnace. Slowly evacuate to 8×10 -3 MP, filled with pure nitrogen, the temperature starts to rise after the pressure reaches 0.12MP, observe the pressure in the furnace when it reaches 1500°C, and then fill in 1.5% oxygen according to the pressure in the furnace, then heat up the melt, and grow the seed crystal. The growth conditions are as follows: pulling speed 1-2mm / hr, rotation speed 5-20rpm, after the growth is completed, it is gradually lowered to room temperature and released from the oven.

[0019] The Yb:YAG crystal grown by the above process is compared with the Yb:YAG crystal grown in ordinary nitrogen by medium-frequency induction pulling method to grow Yb:YAG laser crystal. The absorption bands of the former at 370nm and 625nm disappear, the lattice defects are reduced a lot, and the Yb at 900-1050nm 3+ Both the intrinsic absorption and the emissi...

Embodiment 3

[0021] Mix the Yb:YAG raw materials according to the ratio, place them in an iridium crucible, and install them in a furnace. Slowly evacuate to 8×10 -3 MP, filled with pure nitrogen, the temperature starts to rise after the pressure reaches 0.12MP, observe the pressure in the furnace when it reaches 1500°C, and then fill in 2% oxygen according to the pressure in the furnace, then heat up the melt, and grow the seed crystal. The growth conditions are as follows: pulling speed 1-2mm / hr, rotation speed 5-20rpm, after the growth is completed, it is gradually lowered to room temperature and released from the oven.

[0022] The Yb:YAG crystal grown by the above process is compared with the Yb:YAG crystal grown in ordinary nitrogen by medium-frequency induction pulling method to grow Yb:YAG laser crystal. The absorption bands of the former at 370nm and 625nm disappear, the lattice defects are reduced a lot, and the Yb at 900-1050nm 3+ Both the intrinsic absorption and the emission...

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Abstract

A method for growing Yb:YAG laser crystals, the device used is an induction heating and pulling type single crystal furnace, and the steps include: weighing raw materials according to the ratio of Yb:YAG and mixing them uniformly, placing them in an iridium crucible, and loading the furnace; The crystal furnace is slowly evacuated, inflated and heated; the seed crystal is placed to grow the crystal; the crystal is slowly cooled to room temperature after the crystal growth is completed; it is characterized in that: the specific process of slowly evacuating, inflating and heating the single crystal furnace includes: Slowly evacuate to 8×10 -3 MP, fill with pure nitrogen, start to heat up after the pressure reaches 0.12MP, observe the pressure in the furnace when it reaches 1500°C, fill in 1-5% oxygen according to the pressure in the furnace, and then heat up the melt.

Description

Technical field: [0001] The invention relates to ytterbium-doped yttrium aluminum garnet laser crystal (hereinafter referred to as Yb:YAG), in particular to a growth method of Yb:YAG laser crystal. Background technique: [0002] The mineral name of YAG crystal is yttrium aluminum garnet, and the molecular formula is Y 3 Al 5 o 12 , belongs to the cubic crystal system, the space group is Oh(10)-Ia3d, in the Yb:YAG crystal, Yb 3+ The ions can replace the eight-coordinated Y at the dodecahedral center in the lattice 3+ ion lattice. Y 3+ ions and Yb 3+ The effective ionic radii of the ions in the dodecahedral lattice are similar, respectively: R Yb 3+ = 0.985 Å, R Y 3+ = 1.019 Å. [0003] Generally, Yb:YAG crystals are grown by the pulling method, and the obtained crystals are blue. This is because of the presence of Yb 2+ And Re-F color center, (see literature J.Appl.Phys.83 (1998): 3825). Since the crystal contains Yb 2+ , so that the lattice is distorted, which...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/28
Inventor 赵志伟邓佩珍徐军徐晓东宋平新周圣明
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI