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Method and apparatus for preparing polycrystals of S-Ga-Ag

A technology of polycrystalline and silver-sulfide-gallium, which is applied in the field of preparation of silver-sulfide gallium polycrystals, can solve problems such as composition segregation, two-phase inclusions, explosion, etc. Material effect

Inactive Publication Date: 2006-01-04
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

In order to prevent container explosion, the existing high-temperature solvent method uses AgBr or PbCl 2 Such as halide as a solvent to reduce the synthesis temperature, but the synthesis product is often polluted by the solvent, and the single crystal grown with it contains inclusions and twins, etc., which is not suitable for making optical devices
Another method for preparing silver-sulfur-gallium polycrystals is the gas-phase transport method in two temperature zones. In this method, the synthetic crucible is placed in two independent heating furnaces, and sulfur (S) and silver (Ag), Gallium (Ga) is heated and synthesized. The main disadvantages of this method are: 1. The container is explosive; 2. The synthesized product has composition segregation and two-phase inclusions, and even contains black products. (AgGaS 2 ) single crystal has obvious cracks and contains a large number of microscopic scattered centers, and is also not suitable for making optical devices

Method used

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  • Method and apparatus for preparing polycrystals of S-Ga-Ag
  • Method and apparatus for preparing polycrystals of S-Ga-Ag
  • Method and apparatus for preparing polycrystals of S-Ga-Ag

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Embodiment

[0032] The raw materials silver (Ag), gallium (Ga), and sulfur (S) used in this embodiment are all 6N grades. During batching, the molar ratio of each raw material is silver: gallium: sulfur=1: 1: 2, and the amount of sulfur added Add 2% on the basis of the weight calculated by the above molar ratio, according to the above ratio, silver is 13.9244 grams, gallium is 9.0000 grams, and sulfur is 8.4437 grams. The shape and structure of the crucible used in the synthesis are as follows figure 1 As shown, the body 1 is a single-layer quartz glass tube with closed ends of φ30×340mm, and a feed pipe 2 runs through the tube wall near the end A of the body. The angle α between the feed pipe and the body 1 is 120°. The material is quartz glass. The synthesis process steps are as follows:

[0033] 1. Crucible cleaning and drying

[0034] After soaking and rinsing the inner wall of the crucible with tap water, inject hydrofluoric acid washing solution to soak for 3-5 minutes, then rins...

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Abstract

A process for preparing high-purity single-phase AgGaS2 polycrystal includes such steps as washing and drying crucible, proportioning high-purity Ag, Ga and S, loading them in crucible and synthesizing. Said crucible is composed of main body and feeding tube. Said main body is a quartz glass tube with closed two ends. Said feeding tube made of quartz glass is near one end of said main and the included angle between them is 105-135 deg.

Description

1. Technical field [0001] The invention belongs to the field of preparation of ternary compound semiconductor materials, and in particular relates to a preparation method of sulfur-gallium-silver polycrystal. 2. Background technology [0002] Silver gallium sulfide (AgGaS 2 ) single crystal is a ternary compound semiconductor with excellent infrared nonlinear optical properties, and can be used to make optical parametric oscillation devices such as frequency doubling, sum frequency, difference frequency, and frequency mixing. However, the single crystals required for the preparation of silver-sulfide-gallium optical devices must be grown from high-quality polycrystals of silver-sulfide gallium. The synthesis of sulfur-gallium-silver polycrystals uses elements silver (Ag), gallium (Ga), and sulfur (S) as raw materials, and the synthesis temperature is about 1000 ° C. The melting points of elements silver (Ag), gallium (Ga), and sulfur (S) (960°C, 29°C, and 119°C respectivel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/08C30B30/06C30B29/46C01G15/00
Inventor 朱世富赵北君张伟
Owner SICHUAN UNIV