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Photoresist composition with optical acid-generating agent containing optical free radical generating agent

A photoresist and photoacid generator technology, applied in the field of photoresist compositions, can solve problems such as generation problems

Inactive Publication Date: 2006-02-08
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the presence of cycloaliphatic units in the photoresist polymer creates problems during the fabrication of semiconductor components

Method used

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  • Photoresist composition with optical acid-generating agent containing optical free radical generating agent
  • Photoresist composition with optical acid-generating agent containing optical free radical generating agent
  • Photoresist composition with optical acid-generating agent containing optical free radical generating agent

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Experimental program
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Embodiment Construction

[0028] The present invention provides a photoresist composition comprising (a) a photoresist resin, (b) a photoacid generator, (c) a photoradical generator and (d) an organic solvent.

[0029] Photo free radical generating agent of the present invention is preferably the compound of following general formula 1:

[0030] Formula 1

[0031]

[0032] Among them, R 1 is hydrogen or (C 1 -C 5 ) alkyl; R 2 is hydrogen, (C 1 -C 5 ) alkyl or phenyl; R 3 is hydrogen, (C 1 -C 5 ) alkyl, phenyl or (C 1 -C 5 ) alkoxy.

[0033] More preferred compounds of general formula 1 are α, α-dimethoxy-α-phenylmethyl phenyl ketone of the following formula 1a or α-hydroxyl-α, α-dimethylmethylbenzene of the following formula 1b Ketones:

[0034] Formula 1a

[0035]

[0036] Formula 1b

[0037]

[0038] Any known photoacid generating photoacid generator can be used in the PR of the present invention. Traditional photoacid generators are described in US 5,212,043 (May 18, 1993), ...

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Abstract

The present invention relates to a photoresist composition containing a photo radical generator, more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) a photoacid generator, (c) an organic solvent and (d) a photo radical generator. The present photoresist composition reduces or prevents a sloping pattern formation due to a higher concentration of acid in the upper portion of the photoresist relative to the lower portion of the photoresist.

Description

technical field [0001] The present invention relates to a photoresist composition (abbreviated as "PRG") containing a photoradical generator. In particular, the present invention relates to a photoresist comprising (a) a photoresist resin, (b) a photoacid generator, (c) an organic solvent and (d) a photoradical generator agent composition. The photoradical generator of the present invention can reduce or prevent image tilt and I / D deviation caused by the higher acid concentration in the upper part of the photoresist than in the lower part of the photoresist. Background technique [0002] The use of chemically amplified photoresists has recently been studied in lithography processes using light sources such as KrF, ArF, VUV, and EUV to obtain high sensitivity when forming fine images on semiconductor devices. Such a photoresist composition is generally prepared by combining a photoacid generator with a base resin polymer (ie, a photoresist polymer or a photoresist resin) ha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004C07C49/82C07C49/84G03F7/039H01L21/027
CPCY10S430/115G03F7/0395Y10S430/124Y10S430/117G03F7/0045Y10S430/126Y10S430/122G03F7/039
Inventor 郑载昌李根守郑旼镐白基镐
Owner SK HYNIX INC
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